Sir what is actual difference between diffusion, doping, ion implantation?? All of them look bit similar, and why we always call oxide as oxide diffusion (OD)?
Hi sir generally fabrication proceeds will go layer by layer ex: po after metal like etc... But you said the etching is different not uniform for all devices, at the time of fabrication only etching also will do by considering material only they will do correct, not for each device I think and some of devices we will not do matching ,how do we protect them from etching please clarify on that
I think you understood my explanation in wrong way , for example if you want to fab poly , all the poly will be fabricated in same time , same layer but etching will not be uniform so cos of this ( if you have 10 finger device 1st and last poly will face too much process variation compare to the middle poly ) we are getting process variation , we can't avoid this problem completely ,we can reduce this as low as possible , thats why we are doing matching , it's applicable for all metal , poly ,od, SiO2,via, etc
Very good about matching.
Thanks for matching 👍👍👍👍
please tell me the text book name and authour for these kind of grat things for better understanding for analog
layout purpose
Can you explain more deeply on matching and it's types and this video is not sufficient to understand the topic please add some more videos on these
this is all basic , if u want to understand , based on my video spend time with book & tool , when ever i'm free , ill upload more depth on matching
@@analoglayout thank you sir
hi sir which book we need to refer for better understanding layouts concept
Allen hasting
Read some IEEE papers topic wise
bhaisahab vt kab se geometry pe depend hone lag gaya ???
Sir what is actual difference between diffusion, doping, ion implantation?? All of them look bit similar, and why we always call oxide as oxide diffusion (OD)?
two types of doping are diffusion and ion implantation.diffusion is isotropic dopant profile. ion implantation is anisotropic dopant profile.
Please make a correction at 12.23 if we reduce the area obviously resistance will increase according to R=(rho)L/A
Kindly rechk the formula r=L/W
@@analoglayout area of materials is tox * W, where tox is constant.. What is the area in this explanation?
@@Rebecca_eenagaraniki_emainditox can't be constant ... Refer random mismatch of manufacturing
Hi sir generally fabrication proceeds will go layer by layer ex: po after metal like etc... But you said the etching is different not uniform for all devices, at the time of fabrication only etching also will do by considering material only they will do correct, not for each device I think and some of devices we will not do matching ,how do we protect them from etching please clarify on that
I think you understood my explanation in wrong way , for example if you want to fab poly , all the poly will be fabricated in same time , same layer but etching will not be uniform so cos of this ( if you have 10 finger device 1st and last poly will face too much process variation compare to the middle poly ) we are getting process variation , we can't avoid this problem completely ,we can reduce this as low as possible , thats why we are doing matching , it's applicable for all metal , poly ,od, SiO2,via, etc
Add more vedio
what is the tool we use sir
cadence IC617 or ICADVM 18 , ICADVM 20
@@analoglayout thank u sir nd can we give bookname with author for analog layout tainee engineers
Art of analog layout