Once your layout is done , you have find a optimal place to keep diode , just think about collateral DRC and LVS issues , it's not so easy to modify your layout .... So u need time
hi , once the diode is in reverse breakdown region to discharge charges then will return to normal reverse bias region or not ? because if it is in breakdown how it will avoid discharging of actual signal even if temperature changes as you said operating temperatures and fabrication temperatures. can you please make one video or comment on this?
But for pn junction diode if the reverse voltage reaches the reverse breakdown voltage , the diode gets damaged. Then how we can we use pn junction diode?? Are antenna diodes and normal pn junction diode same ???
It's a normal on junction diode , and even if it's damaged during fab , that will not affect out original chip functionality , this will protect out chip from antenna problem during chip fabrication time
At the time of fabrication , all the device's and metal will be at almost 1400 to 2700°c , so all the device's are thermally unstable , so we don't want huge reverse breakdown voltage , even Little voltage will break the junction ....
@@analoglayout thank you, one more question ,how much positive voltage will accumulate during plasma etching and what is range of reverse breakdown voltage for diode we were using??
We cannot calculate , exactly how much will generate .... When device is in particular range of temperature we can define reverse breakdown voltage , if the device is in too much high temperature even small voltage can break the reverse junction
@@analoglayout thanks for replying....I watched plasma etching video also but I didn't get why only positive charge is accumulates on metal during etching process even though plasma is neutral???? Someone asked the same question and you suggest to watch the plasma video and I watched but sorry I didn't get....can you please give me answer?
The reason is simple. In simple words, the surface where manufacture processes take place is grounded. There is no power terminal. Hence, during etching only positive charge is formed in long routes due to the property of "static electricity".
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Sir, You explained in gentle manner and the subject which you delivered is easily understandable ... Really yours is Excellent Work. Thank you.!!
Ur welcome , thx for the support
Very well said! Good one upload more & more videos
Thank u sir for giving access to the pdf
Hi Sir, your explanation is really nice, one question, why do we some time add multiple antenna diodes on a singe net to fix the antenna effect.
Once your layout is done , you have find a optimal place to keep diode , just think about collateral DRC and LVS issues , it's not so easy to modify your layout .... So u need time
hi , once the diode is in reverse breakdown region to discharge charges then will return to normal reverse bias region or not ? because if it is in breakdown how it will avoid discharging of actual signal even if temperature changes as you said operating temperatures and fabrication temperatures. can you please make one video or comment on this?
very good explanation. thank u
Will that physical connection of reverse break down n-diode will present after fabrication?. If present, will that not impact normal operation?
Sir stick diagram and netlist formation video cheyandi sir
But for pn junction diode if the reverse voltage reaches the reverse breakdown voltage , the diode gets damaged.
Then how we can we use pn junction diode??
Are antenna diodes and normal pn junction diode same ???
It's a normal on junction diode , and even if it's damaged during fab , that will not affect out original chip functionality , this will protect out chip from antenna problem during chip fabrication time
@@analoglayout Ok Sir ,Thanks a lot
You mentioned at 2500v reverse bias diode will work...but in that case at higher voltages metel may melts right??
At the time of fabrication , all the device's and metal will be at almost 1400 to 2700°c , so all the device's are thermally unstable , so we don't want huge reverse breakdown voltage , even Little voltage will break the junction ....
@@analoglayout thank you, one more question ,how much positive voltage will accumulate during plasma etching and what is range of reverse breakdown voltage for diode we were using??
We cannot calculate , exactly how much will generate .... When device is in particular range of temperature we can define reverse breakdown voltage , if the device is in too much high temperature even small voltage can break the reverse junction
@@analoglayout thanks for replying....I watched plasma etching video also but I didn't get why only positive charge is accumulates on metal during etching process even though plasma is neutral???? Someone asked the same question and you suggest to watch the plasma video and I watched but sorry I didn't get....can you please give me answer?
I said positively charged ions , not positive charges .... In side plasma both +ve - ve charges will be there
sir how charges will accumulate while doing etching please tell me sir
Pls watch dry etching video or plasma etching video in our chennal
Can we use mos diode also to avoid antenna effect?
No , antenna diodes are different from typical diode
@@analoglayout So, what are the types of antenna diode? any documentation of NAC/GNACs?
why we always take reverse bias in antenna insertion
Please explain me 2nd order effects
Thank u sir
hi How can you say after plasma etching the chargers are positive only ???
Positively charged ion
Watch plasma video once , u will understand , simply don't ask questions without watching full or proper videos
The reason is simple. In simple words, the surface where manufacture processes take place is grounded. There is no power terminal. Hence, during etching only positive charge is formed in long routes due to the property of "static electricity".
@@analoglayout please share the link here about plasma video
how to calculate Antenna ratio in practically
Thanks Sir
what about pmos??
Both mos have antenna effect , n diode u can use for both mosfer , just change the connection
If you don't understand my comment then you don't understand what iam trying to tell
Not so useful..
if ur not able to understand this , ur not fit for vlsi industry , musically kiddos ... thx for ur valuable comment
Which field are u working? If u are IT u can not get this concept. The way he explains superb
thank you sir