In this video the Effect of increasing temperature on fermi level in intrinsic semiconductor and n-type and p-type semiconductors is discussed. Sound credit : Chaitanya
Sir on heating n-type semiconductor you said that the fermi level will shift downwards because more and more electrons from valance band will jump to conduction band leaving holes ... but sir isn't the no. Of electrons jumping= no. Of holes created so fermi level should not be disturbed as in case of intrinsic semiconductor? Please reply
In case of intrinsic semiconductor fermi level will remain same as number of holes in valence band will always be equal to number of electrons in conduction band at all temperatures. In p-type and n-type semiconductors, it will not be the case. Please watch the video carefully.. It is explained in the video.
I can not understand the idea of Fermi levels shifting in doped semiconductors towards those of in intrinsic one with the increase of temperature. It seems to me they should remain unchanged. The thing, I understand that in extrinsic semiconductor the formed "donor" and "acceptor" band is not similar with Fermi level ?
Sir i having a doubt as we know if we increase temperature in intrinsic semiconductor the enery gap is decreased due to high concentration of electron but why fermi level is same
Sir if we increase the temperature, than same number of electron hole pair will be there.. So if we increase the temperature then fermi level will remain in its old position .. Please explain
In case of intrinsic semiconductor fermi level will remain same as number of holes in valence band will always be equal to number of electrons in conduction band at all temperatures. In p-type and n-type semiconductors, it will not be the case. Please watch the video carefully.. It is explained in the video.
Doping levels in p-type and n-type semiconductor may be same or different. The penetration of the depletion layer in p-type and n-type semiconductor depends on the doping level.
Sir nicely explain everything.Thanks to GOD to give such type of lecturer.
So nice of you.. keep watching and share with your friends also..
Came 10 min before exam 😂
Best luck
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Ur explanation is really good & to the point 🙏thanks sir
You are most welcome
Keep up the good work sir!!.very useful for Engg students
Thanks..
Sir on heating n-type semiconductor you said that the fermi level will shift downwards because more and more electrons from valance band will jump to conduction band leaving holes ... but sir isn't the no. Of electrons jumping= no. Of holes created so fermi level should not be disturbed as in case of intrinsic semiconductor?
Please reply
In case of intrinsic semiconductor fermi level will remain same as number of holes in valence band will always be equal to number of electrons in conduction band at all temperatures. In p-type and n-type semiconductors, it will not be the case. Please watch the video carefully.. It is explained in the video.
Yes it is also my same doubt
@@EngineeringPhysicsbySanjivsir please explain it 😢
Sir for you it may be obvious, but I can't get. Could you please elongated on the subject ?@@EngineeringPhysicsbySanjiv
Saved my marks before semester exam 😊❤️
All the best.. keep watching and share with your friends..
@@EngineeringPhysicsbySanjiv saved my resect ,life ,home ,status and all.
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I can not understand the idea of Fermi levels shifting in doped semiconductors towards those of in intrinsic one with the increase of temperature. It seems to me they should remain unchanged. The thing, I understand that in extrinsic semiconductor the formed "donor" and "acceptor" band is not similar with Fermi level ?
Sir i having a doubt as we know if we increase temperature in intrinsic semiconductor the enery gap is decreased due to high concentration of electron but why fermi level is same
Sir if we increase the temperature, than same number of electron hole pair will be there.. So if we increase the temperature then fermi level will remain in its old position .. Please explain
In case of intrinsic semiconductor fermi level will remain same as number of holes in valence band will always be equal to number of electrons in conduction band at all temperatures. In p-type and n-type semiconductors, it will not be the case. Please watch the video carefully.. It is explained in the video.
Superb explanation sir
Thank you.. Keep watching.. and share with your friends..
Is Doping Level In ptype and N type is Similar or Different. Explain In brief
Doping levels in p-type and n-type semiconductor may be same or different. The penetration of the depletion layer in p-type and n-type semiconductor depends on the doping level.
@@EngineeringPhysicsbySanjiv Thanks For Answering Sir
Thanks sir , perfect perfect perfect
Most welcome
So useful vedio sir
Keep watching..
Sir,I understood all you said,but please add captions in upcoming videos
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Thanks..
thank you sir!!
Thanks sir
Most welcome..
Thank you sir
Welcome
Thank you so much
Most welcome
Helpful
Glad it helped.. please share with your friends..
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please share with ur friends as well
Superb explanation sir
Thank you.. Keep watching.. and share with your friends..