sir, while calculating deltaQ , why did you calculate only the charge increased in n side? what about the addition of negative charges that has increased in the p side?
+ali Nasser amount of charge increased in n-side will be equal to amount of charge increase in p-side, opposite in sign though - due to charge neutrality. Why charge on one side considered for calculation? Example : parallel plate capacitor, +Q on one plate and -Q on other plate, then capacitance is C=Q/V. Q = amount of charge on one plate, because the amount of charge on the other plate will be exactly same, but opposite in sign. Hence, considering only one side! Hope this helps, Please feel free to ask if not clear. Thanks, Techgurukula.
Could I ask you a question? The definition of depletion capacitance is different from diffusion capacitance. and the total capacitance is expressed by [ C(diff)+C(dep)]. how is it possible?
Hi, just wanna ask that does the expression C=del(Q)/del(V) have the range of applied voltage from forward bias to reversed bias? also, is the expression for Pn(x) only valid for forward bias?
+yang Yang C=del(Q)/del(V) is a general expression for small-signal capacitance. This value will depend on the DC voltage (Q-point). Coming to your questions: 1. yes, it is valid for any voltage range, but the expression for charge we have has limitations due to our assumptions like - low-level injection & Depletion Approximation. 2. The expression for Pn(x) is valid for both Froward and Reverse bias. Thanks, Techgurukula.
+techgurukula sorry, I have another question which is a little stupid.....so Pn0 is the background concentration of ions in N-side, I also see there is Pp0 in some books, does it mean the ions concentration in P-side? and this is actually the doping concentration NA? there are too many symbols that just confused me....
I've seen dozens of videos in this subject, and this is the best for sure! Congratulations by your didactics, and thank you!
Very clear and intuitive. Thank you so much for working hard on putting this together and posting it.
Very crisp and to the point explanation. Thanks a lot.
Excelent video, it clarifies perfectly the exposition of my Millman-Halkias book! (Y)
Very very clear concepts building lectures. Thanks for videos...
simply great explaination
...wow...
Very nicely explained 👍
sir thank you for this.... plz keep on uploading more videos
Sure Rajdeep! Thank you for the comment.
best
He didn't even tell us to like and subscribe
O cara é zika mesmo, mano. Sé loko
where does A goes at 19:55
very nice video, have you some bibliografy about it?
Sir
The videos are excellent
Could u suggest which book to follow
Sure Gonna Dedicate my Gate Edc marks for u♥️.
V bi means
awesome sir... ty
പെർഫെക്റ്റ് ❤️
How depletion capacitance changes when the diode is in reverse bias? How to find the depletion capacitance using CRO? Please solve my doubts on this.
how to calculate transit time from diffusion constant and diffusion length ?
sir, while calculating deltaQ , why did you calculate only the charge increased in n side? what about the addition of negative charges that has increased in the p side?
+ali Nasser
amount of charge increased in n-side will be equal to amount of charge increase in p-side, opposite in sign though - due to charge neutrality.
Why charge on one side considered for calculation?
Example : parallel plate capacitor, +Q on one plate and -Q on other plate, then capacitance is C=Q/V.
Q = amount of charge on one plate, because the amount of charge on the other plate will be exactly same, but opposite in sign.
Hence, considering only one side!
Hope this helps, Please feel free to ask if not clear.
Thanks,
Techgurukula.
got it. thanks :)
got it. thanks :)
got it. thanks :)
got it. thanks :)
Dear sir, Can u pls clear my doubt.. how u r rewriting the equation of C at the time of 9.25..
Could I ask you a question? The definition of depletion capacitance is different from diffusion capacitance. and the total capacitance is expressed by
[ C(diff)+C(dep)]. how is it possible?
sir makes videos for mosfet as soon as possible
sir, what is the equilibrium hole concentration and what is the equilibrium electron concentration...?
transition and diffusion capacitance
What does Vt stand for? What is it?
Vt is Thermal Voltage, which is equal to KT/q - discussed in previous videos.
nice video thnks :)
the Ip and In should be multiplied by area(A) which is shown at 19.45 ..... and the rest are good as well as intelligible .
Hi, just wanna ask that does the expression C=del(Q)/del(V) have the range of applied voltage from forward bias to reversed bias? also, is the expression for Pn(x) only valid for forward bias?
+yang Yang
C=del(Q)/del(V) is a general expression for small-signal capacitance. This value will depend on the DC voltage (Q-point).
Coming to your questions:
1. yes, it is valid for any voltage range, but the expression for charge we have has limitations due to our assumptions like - low-level injection & Depletion Approximation.
2. The expression for Pn(x) is valid for both Froward and Reverse bias.
Thanks,
Techgurukula.
Awsome! thank you very much!
+techgurukula sorry, I have another question which is a little stupid.....so Pn0 is the background concentration of ions in N-side, I also see there is Pp0 in some books, does it mean the ions concentration in P-side? and this is actually the doping concentration NA? there are too many symbols that just confused me....
+yang Yang
th-cam.com/video/Ihu0zC7d7hU/w-d-xo.html
watch this video, within first 2 mins, it's explained.
subtitle please