Thank you so much I only use few hours then understand many things of MOSFET by watching your vedio series. SHORT and CLEAR, no nonsense, really thanks!
I can't thank you enough!! You saved my life and you saved my brain from getting crazy. You are really a genius and can grasp any concept easily. Great respect man!!!
Thankyou sir , you gave a deep insight to this topic , which I was looking for. It is very sad that very few teacher go to this depth and makes fundamentals clear. After NPTEL (iit Madras) this is the best explanation I have seen.
for high frequency, the depletion width is increasing, so why is the capacitance just Cdep, max? why is not like in depletion mode where its dependent on the depletion width length, which in the case of high frequency, is bigger than xd max.
doubt 😕 at 15:00 C'dep(xd,max), [xd,max is the previous xd,max] or [ xd,max after adding 🔺Q charge on depletion region] if 🔺Q charge is adding on depletion region then depletion width should be increased so xd,max should be increased, so at 15:00 ,{ Is xd,max is new xd,max }
The "capacitive action" after inversion happens only on the metal-oxide surface and the oxide-silicon surface. You can see that any delta Vg after inversion is accumulating NET CHARGE on the surface of the metal-oxide and oxide-silicon layers only, separated at a distance of tox. The depletion capacitance is not a "capacitance" anymore after inversion because there is no net charge accumulating on both surfaces of the depletion layer (the two surfaces namely being the oxide-silicon surface and the right side of the depletion layer) for any delta Vg. Hope it helps. Cheers!
This is confusing. Why does in accumulation q gets deposited at interface, while in depletion mode it cant and then in inversion mode, with depletion layer it can? Why would there be thermal generation when theres no heat for inversion to happen from within the depletion layer? And for inversion, if q gets deposited on the metal and semiconductor interface, why wouldn't Cox change? C=q/v, q changes there.
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This is by far the best explanation of MOSCAP I've ever seen
No person can explain the concept of MOSCAP the way you did it Sir. Kudos to your knowledge
It is a very good explanation and very beneficial. I hope channels like this one becomes more popular among people. Thank you so much
Thank you so much I only use few hours then understand many things of MOSFET by watching your vedio series. SHORT and CLEAR, no nonsense, really thanks!
I can't thank you enough!! You saved my life and you saved my brain from getting crazy. You are really a genius and can grasp any concept easily. Great respect man!!!
I am appearing in ESE Mains but was never clear in MOSFETS. You are amazing.. I am now confident in MOSFET for the first time!
Thanks for uploading videos on mocap. These are the best videos on youtube for MOSCAP. It helped me a lot.
Keep uploading more content related to ECE.
Thank you Pranjal. Sure, will be making more videos related to ECE.
These are rare stuff u r real hero sir!!
Thankyou sir , you gave a deep insight to this topic , which I was looking for.
It is very sad that very few teacher go to this depth and makes fundamentals clear.
After NPTEL (iit Madras) this is the best explanation I have seen.
This was the only topic which was bothering me while solving gate questions, and then I met you 😊
You sir are a gentleman and a scholar, thank you for the thorough explanations!
I was actually looking for this. Thank you so much
clear and lucid explanation. Thank you for this lecture series.
Very helpful explanation. Just loved it. Everyone can't explain like this. Thanks a lot.
Sir, you explain concepts so deeply in great easy way ,,, love studying with you
THANK YOU SIR. The lectures are short and clear. Helped me a lot before my exam!
Thank you so much sir! I have an exam in a few weeks and i really understand this now!
Sir, you are an excellent teacher. I appreciate your work.
The best explanation on TH-cam...
Thanks a lot sir👏👏♥️💪
Very much thankful for the series of videos.
Great lectures top class
Amazing explaination!!!i am grateful to you for your 7 videos lecture on cmos.they are of great help.
Words are not sufficient to praise u sir
for high frequency, the depletion width is increasing, so why is the capacitance just Cdep, max? why is not like in depletion mode where its dependent on the depletion width length, which in the case of high frequency, is bigger than xd max.
Make as many as videos we love your explanation 🔥🔥🔥
Very good presentation thanks
Sir huge respect for you god bless you
detailed information and excellent explanation sir,great sir....
v good sir loved the way you explained it
Seriously you are great sir 👍👍👍👍👍👍👍👍👍 thanks for this video
It is really helpful, thank you sirji...
Thanks for your efforts, you just made these topics very easy to understand :-)
Amazing stuff here. Thank you so much!!!
Great Video! Thank you!
What a fantastic lecture!!!
You are a lifesaver
Great video sir...😍😍
Thanks a lot! Subscribed!
excellent, thanks sir.
GOD BLESS U MY MAN
Super..explanation sir!!
Thank you so much for the good explanation!
Thanku soo much sir.... 👌👍
excellent sir
doubt 😕
at 15:00 C'dep(xd,max),
[xd,max is the previous xd,max] or [ xd,max after adding 🔺Q charge on depletion region]
if 🔺Q charge is adding on depletion region then depletion width should be increased so xd,max should be increased, so at 15:00 ,{ Is xd,max is new xd,max }
This video is like a god giving boon to his devotee who is praying since ages.
Sir what's the difference between strong and weak inversion.... whether the weak inversion occurs during the depletion region formation itself sir....
Can you please explain sheet of charge approximation? Thanks
how you wrote the depletion capacitance as e(si)/x(d) delta q and delta(- q) are separated by distance by x(d)+t(ox)
Sir, In inversion mode, why are we not considering €si? There is depletion region charge for width Xdt.
The "capacitive action" after inversion happens only on the metal-oxide surface and the oxide-silicon surface. You can see that any delta Vg after inversion is accumulating NET CHARGE on the surface of the metal-oxide and oxide-silicon layers only, separated at a distance of tox. The depletion capacitance is not a "capacitance" anymore after inversion because there is no net charge accumulating on both surfaces of the depletion layer (the two surfaces namely being the oxide-silicon surface and the right side of the depletion layer) for any delta Vg. Hope it helps. Cheers!
This is confusing.
Why does in accumulation q gets deposited at interface, while in depletion mode it cant and then in inversion mode, with depletion layer it can?
Why would there be thermal generation when theres no heat for inversion to happen from within the depletion layer?
And for inversion, if q gets deposited on the metal and semiconductor interface, why wouldn't Cox change? C=q/v, q changes there.
Doubt: if we increase the delta v very fast wouldn't it be low frequency??
🔭🔭🔭 thanks 🙏🏼 sir
is it the same for PMOS CAP too?
nailed it
thank youuuuuu
How can we plot Vgs/Cgs in PSpice?
From where we refer the written material ...
Or book
Thanx u
You are next to god
Hi