PN Junction Diode (No Applied Bias)
ฝัง
- เผยแพร่เมื่อ 18 มี.ค. 2016
- Analog Electronics: PN Junction Diode (No Applied Bias)
Topics Covered:
1) PN Junction.
2) PN Junction Diode.
3) Meaning of Biasing.
4) Diffusion and Diffusion Current.
5) Depletion layer or space charge region.
6) Drift Current.
7) Barrier Potential.
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atoms can't be moved.they are in circle+minus or hole
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This is the best comment so far.
From ALGERIA thinks sir, your video is the best in youtube .
In the first semester I followed circuit analysis videos in this channel after missing the lectures in school and thanks to this channel I scored an A grade
And this second semester I hope I’ll have score in analog electronics as well as that of circuit analysis
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Discussing electron and hole movement is like describing a picture and it's mirror image at the same time. A complete understanding of P-N junction theory can be done with electron flow alone. Dr. Shockley invented the idea of "holes" because it greatly simplified his math. But it is unnecessarily confusing and .adds nothing but extra work to the physical understanding/
I totally agree
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@@222allmywishescometrue I was an Electronics and Communication engineering student. Don't panic about the course you have taken up, in my experience, trying to learn something from the subject for no reason, using help of such channels has helped me. Enjoy learning as you never know if you'd get the opportunity again. Wishing you the best 😊💜
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Awesome lecture! Everything is crystal clear now
After sleeping in class.. I'm here
Sir , seriously I am saying that...it is the best video on pn junction in TH-cam...I have many questions on it so see almost other's channel video....but it's best because it give me every question answer...but sir if you explain more on drift current as like diffusion current..it will superb...thnx again
yes sir
it is true
@@grandhivamsi9710 I refer one more that's Khan academy pn junction video...check this
Thank you very much....It is very helpfull.Bless the lecturer in the vdo and the one for uploading it
Thank you once again.
you are exceptionally brilliant and knowledgeable sir!!!
Thank you so much ,Excellent explanation!!!!!
Sir you are awesome. We are left without any doubts after watching your videos. Even if a doubt arises, the next moment you talk about that doubt. It's like you can read the mind of students.
Drift current is not only because of minority charge carriers.Drift current is electric current due to the motion of charge carriers under the influence of an external electric field while diffusion current is electric current due to the diffusion of carriers leading to a change in carrier concentration
Exactly
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Very well explained sir.. Many thanks !!!
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Hey can you draw out the energy diagrams for these diodes please?
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Excellently delivered
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Excellent job , Thanks a lot
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Please what’s the breakdown voltage of a pn junction diode and how it’s calculated ?
PInky nagar my friend told me about this .And what I have seen till this comment is very nice .Thanku
Thank you so much!
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My saviour for tomorrow's sem final _/\_
same here..
But now
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good explanation..
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At the depletion layer possitive layer repel the holes but it attracts electrons is possible,so is it depletion region increases?
Hole is a vacant space created by the valence electron (when it moves from its own place) ,but how a hole is moving from one place to another
Koduru Sindhu actually hole is not moving in the semiconductor....hole is a relativistic concept...... only electrons are moving...and vacant position of electron is called hole.... relatively holes are moving not actually.....in reality only electrons are moving
in fact u did the best explanation
continue helping us . God bless u
Sir can you pls make a video on explanation on energy bands of n and p type semiconductors !!
May I know from which book you are referring, so that I can go through it once
Thank you for making these videos : ) Could you explain what it means for a hole and an electron to recombine?
Hole is a place where an electron coul be bound, but there is nothing ) So when free electron and hole meet each other, there is going to be no hole and a bound electron.
Yah
so helpful!
Best explanation 👍
Do you have planned to make more advanced content, such as Embedded system design or DMA, Interrupts, Memory Shadowing, Indirect Addressing and work maybe design with CPUs?
Thank u sir i got full clarity in this subject. But kindly let me know whether u have lectures on network theory
Do you see a search bar on top of the browser? I think it should help you :p
Sir In video You told that the negative charge will repel the eletrons and don't let them to come in p side but the +ve ion layer on P side should also attract the eletrons ( as there is concentration difference ) and No longer remains Uncovered
Hi , there is no +ve ion layer on P side.
I think it may also be due to the electric field force repelling them. So overall no movement takes place
Thanku sir your all videos are best👌👌👌
super and nice explanation
thank u sir making these vedios,sir I have a question that is- when barrier potential formed then diffusion current will be zero then how in stade state condition diffusion current =drift current also tell how we get drift current after formation of barrier potential.plz clear my doubts
Please why are the donor ions in the n type semiconductor positive?
where as the impurity atom used is phosphorus and its negatively charged
Will you make a video about Fabrication methods of PN junction sir??... Please, I am really understanding the topic to the fullest from your lectures. So, was asking this favour sir!!!! :(
Thankyou so much sugeeth sir and neso academy
How do electrons and holes combine? If an electron goes to a hole, it creates a hole in its previous position. How can there be no electrons or holes in the depletion region?
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Sir u solved my class 12 problem which is even not solved by IIT professor in btech 1st year.
Thank u very much sir.
Sir according to theory discussed....the drift current flows after the diffusion stops ...so there will be some time difference between drift and diffusion current so why we are taking them equal??
Ofcourse there should be a time difference till the depletion layer is achieved.Steady state is achieved once the depletion layer is formed and actually there is negligible flow of majority charge carriers and so is the case with minority charge cariers.In practicality the drift current is very less so we take it equal to the duffusion current.
Excellent sir🔥
thank you so much
Sir !! In the lecture you told that drift current is equal to diffusion current , can you please elaborate it ? I am not able to understand that thing .
Yeh. They are the majority carriers and other one is minority, how come both produce same current ?
why donor atoms aren't negative ?please anyone explain
Can You explain how the immobile electrons surface out so that depletion region formed, Similarly how the drift current obtained if the depletion region consists of only immobile electrons....?
electrons are mobile, the ions are immobile,
Biasing is application of voltage accross 2 terminal.
But is it biasing with respect to DC voltage or AC voltage?
Thank you for the video by the way.
DC in this case
Dear Neso academy, i have a doubt , will you clear it for me?
Diffusion layer: Absence of free carriers but immobile Donor and acceptor atoms will be there. The free carriers hole and electron will recombine. While recombination, what happens ? what happens when hole and electron recombines? Do they cancel out ? if so where will their masses go? ( You said mass of hole > mass electron in previous lecture). Recombination result please explain.
Why you are representing ions in whole region?
Thank You So Much
Big thanks from Hungary!
IES INterview question why we can't able to measure the built-in potential of the p-n junction by using a voltmeter.?
What's the answer brother ??
@@sobankumar4927 barrier potential is inside the material, how can you measure it?
If we keep voltmeter there exits another potential difference which is opposite to the existed ones and hence both get cancelled so we can't measure the built in potential.
We couldn't measure this built in potential because there exist a counter potential(at terminals) which cancells with the built in potential (to satisfy the law of conservation of energy )
I looked into this myself. If the potential were externally measurable, you could derive infinite free energy from them. You could just connect a wire and have current flow with no battery, since you have a potential, current would flow. But that violates conservation of energy. So the metal contacts cancel out this potential. Look up ohmic contacts and metal-semconductor junctions for more information.
In depletion region the electron is recombined with hole so there ion is converted into atom. But how there is still ions are present?
All the not recombine some will stay alown
what is meant by uncovered charges
Why acceptor and donor ions not recombine in depletion layer. My chemistry is very poor. Can anybody please explain
Thanks alot bro! but kindly explain the point that Whole is equivalent to positive charge ? thts y it repels the whole and similarly the negative ions repel electrons when depletion region is formed.If it is so than why there is diffusion current on start ?
Hole*
At 16:20
In depletion region why there are electron and holes present
As it is depletion layer there should be no charge carriers
So why they present
Thanks a million ✌️
YOUR VOICE IS VERY PERSUASIVE
How p type side immobile
Ion have negative charge plsss
Explain
And n side have possitive charge
The p-dopants release h+, so they become negative ions.
The n-dopants release e-, so they become positive ions.
For example: an n-dopant like phosphorus has 5 valence electrons vs. the 4 valence electrons of silicon. Once you add phosphorus to the silicon lattice that extra electron separates from the phosphorus atom and can freely move around. However, the nucleus of the phosphorus atom stays put. So the phosphorus atom overall has lost 1 (-) charge and 0 (+) charges. Therefore (net charge) = - (-1) = +1.
If you google search for a picture of p- or n-doping, you will usually see the dopant atom in a Si lattice together with the extra h+ or e-. This makes it clear where that h+ or e- comes from, but in reality it DOES NOT STAY THERE. The extra h+ or e- disassociates from the dopant atom, leaving behind an ion with the opposite charge (i.e. negative of p-dopants and positive for n-dopants).
Sir loss in electron and formation of holes are different
Sir why diode is called as minority charge carrier device, can you explain please?
thankyou so much sir .
Thank you
Nice but
1.what is steady state?
2.why diffusion current=drift current at steady state?
because a equilibrium state occur. Drift current is the opposite of diffusion current as we know drift current flow due to electric field and diffusion current flow due to the difference in concentration of majority carriers. Now steady states means no current will flow that means the two opposite current i,e drift current and diffusion current are equal and this state is called steady state or equilibrium state.
Arin Saha
When the concentration of Majority Charge carrier is not equal to Minority charge carrier than how drift current can be equal to diffusion current. Your explanation is not correct.
let me give it a lot of attention maybe i may achieve more from these videos
How is the current contributed by majority charge carriers equal to the current contributed by minority charge carriers in steady state ? i.e.,how is diffusion current equal to drift current ?
Ye pura lecture series kaha milega
Please give the link
How can the hole move through the depletion layer. I think only the electrons will move because they are mobile.
tnx
Prof I am giving higher potential to anode +10 v and lower potential to +5 v to cathode. What is the behavior of diode now?
it is act like forward biasing. positive terminal is in higher potential to negative.
Can you cover electric machinery?
Top study sir .....
thanks sir
What is steady state?
Is this good for extc student sem 3 ?
I think p type are positevely charged carriers u mentioned n type y sir
Useful !!!!!
I want to know its derivation
Thanks
Can it is also for b tech first year electronics
thank. you. so. much sir
Nice sir.
Sir uncovered immobile ions means
You are the best
How diffusion current =drift current ....as minority charges are very less compared to majority charges.. Please 🥺 explain