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Excellently explained! Made clarity on body biasing technique and current VLSI industry needs. Thanks for the Video ST Electronics!
Excellent illustration and explaining.
With less effort I come to understand a Very good concept
Thanks indeed for a wonderful illustration. Saved tons of reading effort.
Well done STM. It would be interesting to see how this implementation of the process compares to the tri-gate of the same technology node.
Thx STM for this great video really intresting and very well explained for someone completly new to this technology
Thanks for this video. It helped me a lot to understand the FD-SOI.Thanks!
Thx, the visualization is very insightful.
thank you for easy explanation that it's very good video.
But how the power dessipation can be reduced with different body and gate voltage? Can anybody Explain please :)
I think they are talking about increasing the Vth for devices by body biasing so that the subthreshold leakage can be reduced.
@@prjthkmr I think subtheshold current will not happen due to insulator below the channel that makes fully depleted... correct me I iam wrong
one think i didn't understand in the video: how is the lithography reduced when using fd-soi? by what means? it appears as if you switch to fd-soi and automatically the lithography is reduced.
very appreciating video..loved it..
Going to help in my university exam. Thanks
Thanks a lot!
Awesome Video & Ultimate technology.Explanation is really simple. :) :)
very good video...
Isn't this a Swiss-French semiconductor company?
I have one question, how to mitigate the latch-up problem in SOI structure devices?
bão dmais , obg memo
Greate vídeo
Superb video, shits all over Intel's education vids
10 years later, you still can not deliver 14nm FD-SOI👿
видео полезнен
Toby Road
Google Pixel brought me here. 👽
Excellently explained! Made clarity on body biasing technique and current VLSI industry needs. Thanks for the Video ST Electronics!
Excellent illustration and explaining.
With less effort I come to understand a Very good concept
Thanks indeed for a wonderful illustration. Saved tons of reading effort.
Well done STM. It would be interesting to see how this implementation of the process compares to the tri-gate of the same technology node.
Thx STM for this great video really intresting and very well explained for someone completly new to this technology
Thanks for this video. It helped me a lot to understand the FD-SOI.
Thanks!
Thx, the visualization is very insightful.
thank you for easy explanation that it's very good video.
But how the power dessipation can be reduced with different body and gate voltage? Can anybody Explain please :)
I think they are talking about increasing the Vth for devices by body biasing so that the subthreshold leakage can be reduced.
@@prjthkmr I think subtheshold current will not happen due to insulator below the channel that makes fully depleted... correct me I iam wrong
one think i didn't understand in the video: how is the lithography reduced when using fd-soi? by what means? it appears as if you switch to fd-soi and automatically the lithography is reduced.
very appreciating video..loved it..
Going to help in my university exam. Thanks
Thanks a lot!
Awesome Video & Ultimate technology.
Explanation is really simple. :) :)
very good video...
Isn't this a Swiss-French semiconductor company?
I have one question, how to mitigate the latch-up problem in SOI structure devices?
bão dmais , obg memo
Greate vídeo
Superb video, shits all over Intel's education vids
10 years later, you still can not deliver 14nm FD-SOI👿
видео полезнен
Toby Road
Google Pixel brought me here. 👽