Oh my god, I took my first semiconductor physics course the year before this playlist was posted and didn't find any good content on TH-cam explaining it. Now I'm taking a power electronics course and needed some refreshing of the contents, and this is just PERFECT! I wish I had them when I first needed them, I was really desperate lol. THANK YOU!!! These videos are amazing
Thanks for the explanation. Have one question. How does this gate-drain capacitance vary with varying drain voltage. Why is Cgd called variable where as Cgs is fixed
this video helps me a lot. but still I have some questions for MOSFET cap. Is it changed by operation region? I think cap will reduced when MOSFET operate at triode region than the cutt off region by the electrons are moving.
Hawk Good question! This capacitance is only formed between the deain/source well regions and the gate, neither of which is really affected by the region of operation, so we treat this capacitance as constant.
Not as far as I’m aware, Ld is a physical width and refers to things about the manufacturing process. Why the “d” and not something more sensible like “o” (for overlap)? I’m not sure.
Oh my god, I took my first semiconductor physics course the year before this playlist was posted and didn't find any good content on TH-cam explaining it. Now I'm taking a power electronics course and needed some refreshing of the contents, and this is just PERFECT! I wish I had them when I first needed them, I was really desperate lol. THANK YOU!!! These videos are amazing
You are the only one who explained the overlapping capacitance Cov. Thank you, you saved my exam :D
My pleasure! It's one of those subtle but important topics that doesn't come up much, I am glad you found it useful.
crisp and ro the point explanation you are the best last minute guide in exams
You deserve more views, made everything clearer thank you
Thanks :D I'm glad you found it helpful
Thanks for the explanation. Have one question. How does this gate-drain capacitance vary with varying drain voltage. Why is Cgd called variable where as Cgs is fixed
Thank you for your explanation! From south KOREA :):)
*Sips on MOSFET*
Mhm, yes, a good year. Excellent doping concentrations, and a very full body.
Exquisite.
Very nice video with good content
This was amazing, thank you so much 😊🙏🏾
this video helps me a lot. but still I have some questions for MOSFET cap. Is it changed by operation region?
I think cap will reduced when MOSFET operate at triode region than the cutt off region by the electrons are moving.
Hawk Good question! This capacitance is only formed between the deain/source well regions and the gate, neither of which is really affected by the region of operation, so we treat this capacitance as constant.
@@JordanEdmundsEECS thanks for your good video and comment!
@@JordanEdmundsEECS you mean to say , it won't effect delay of cell also???
Thats great.. Can you please also explain how can we practically measure sub threshold current in MOSFETs
With a really nice SourceMeter (like a Keithley 2400).
Thanks, keep doing videos like this
Will do :)
If depletion width is xd , then what's about overlap cap , is it Cox.xd.w , is there any relation between xd and Ld ??
Not as far as I’m aware, Ld is a physical width and refers to things about the manufacturing process. Why the “d” and not something more sensible like “o” (for overlap)? I’m not sure.
Thank you sir.
thank you sir
And thank you for the thank-you :)
will save my life tomorrow