I've begun this series because was the only one which was able to explain clearly the ideas behind difficult concepts, but also went deep enough in the maths and derivations of formulas, but after the end of the quantum mechanics part, you get rid of it and replace with high school levels of maths, which is utterly useless in university terms, which should be the target level of knowledge. I'll abandon this series, but thank you for have helped in me in quantum mechanics and understanding why it made sense in the first place to know it.
In class we derived this formula by integrating the current and the voltage as they are not constant but depending on the position x along the channel. How is it possible that you' ve come to the same exact expression without taking the current as dq/dt and the electric field as dv/dx?
Great question! I’m guessing it is because at some point you actually had to carry out the integral in order to get a formula for the current, and so you assumed a certain profile for the charge distribution (which to get the same formula is just constant).
Shouldn’t this be the derivation for Igs? We start with the capacitor formed by the metal gate and body, so the Q should be the charge of the channel. The E electric field should be the one between the metal and body, but we switch to the field between D and S at 11:10. Any help is appreciated regarding my confusion
Yeah so the gate is separated by an insulator from the channel. It only serves to populate the channel with electrons (via capacitive charging, or the field effect). The current that flows is from one end of the channel to the other (the source to the drain). No current flows (at steady state) from the gate to the source or drain (ignoring leakage current).
The direction of the current in this model is parallel to the two parallel planes of the capacitor. Normally the current should be perpendicular to the plane. This is confusing.
it's impressive that so much approximations lead to kind of something accurate
You made it way eazy for us.
Thanks for this. Please make one video of Why we need n+ dopants. I didn't find explanation for this in videos
Great explanation! Thank you!
it was very interesting... thank you so much for the clear explanation..
Glad you find it clear! Anything in particular that stood out in that regard?
I've begun this series because was the only one which was able to explain clearly the ideas behind difficult concepts, but also went deep enough in the maths and derivations of formulas, but after the end of the quantum mechanics part, you get rid of it and replace with high school levels of maths, which is utterly useless in university terms, which should be the target level of knowledge.
I'll abandon this series, but thank you for have helped in me in quantum mechanics and understanding why it made sense in the first place to know it.
Beautiful derivation :) ❤
can you explain the saturation region of the I/V characteristics, you only explained the Triode region
+1😭
In class we derived this formula by integrating the current and the voltage as they are not constant but depending on the position x along the channel.
How is it possible that you' ve come to the same exact expression without taking the current as dq/dt and the electric field as dv/dx?
Great question! I’m guessing it is because at some point you actually had to carry out the integral in order to get a formula for the current, and so you assumed a certain profile for the charge distribution (which to get the same formula is just constant).
In the video, implicitly, the integral was replaced with a mean value theorem with the resistances trick.
Shouldn’t this be the derivation for Igs? We start with the capacitor formed by the metal gate and body, so the Q should be the charge of the channel. The E electric field should be the one between the metal and body, but we switch to the field between D and S at 11:10. Any help is appreciated regarding my confusion
Yeah so the gate is separated by an insulator from the channel. It only serves to populate the channel with electrons (via capacitive charging, or the field effect). The current that flows is from one end of the channel to the other (the source to the drain). No current flows (at steady state) from the gate to the source or drain (ignoring leakage current).
This is only good to model long channel devices right?
That’s correct, this ignores short-channel effects as well as channel-length modulation.
Wonderful!
Birds singing?)
The direction of the current in this model is parallel to the two parallel planes of the capacitor. Normally the current should be perpendicular to the plane. This is confusing.
Lovely!
why so many ads in this video that i can't even watch the content, all adds wtf