MOSFET- Channel Length Modulation Explained

[@ALLABOUTELECTRONICS]

Timestamps for the different topics covered in the video:
0:00 Introduction
0:15 What is channel length modulation in MOSFET
3:48 Drain current equation with channel length modulation effect
7:10 The output resistance with channel length modulation effect

[@ruinergaming7332]

short channel vs long channel

[@honeypaaturi9979]

What more suggestions could we give, you're just being the best........thank you so much sir.

[@mr.deepak._]

It's awesome than top engineering college lectures ❤

[@indrashispowali]

Thank you very much for such a beautiful explanation

[@vantuannguyen1004]

Hello!
What software do you use to write that, can you recommend it to me? Thank you

[@krishnachidrawar8137]

lots of thanks for this video

[@human_being9]

Thank you so much sir for this helpful video.

[@anujparekh752]

Plz upload new topics video on MOSFET series quickly like with 3-4day gap between video rather than 1 week plz 🙏🙏
Because my exam is coming shortly and I have to coplate this subject
Thanks

[@ALLABOUTELECTRONICS]

I will try my best to upload as soon as possible.

[@ΣωτήρηςΤ-σ2ν]

- What’s the effect of increased VGS on RDS(on) in the saturation mode?

[@vinaykumarkv5830]

Good explaination ❤❤

[@swaritmahalsekar5521]

Sir consider lambda as x, why (x' / L) * Vds is consider as (xL) * Vds? in equation at 6.38

[@freetime8521]

Thank u sir, this video is helpful

[@Mr.PandeyRishav]

Sir here why drain current will not be zero in saturation mode? Because during channel length modulation depletion region touches the oxide layer.. So it should block the path of drain current.. But practically drain current is not zero why?

[@ALLABOUTELECTRONICS]

Actually, at the edge of the channel, the electrons n the channel gets attracted by the electric field and reach the drain terminal. That's why although it appears that there is a break in the channel, the current continues to flow.
I hope it will clear your doubt.

[@Mr.PandeyRishav]

@@ALLABOUTELECTRONICS sir that means you want to say that electric field established near the drain terminal (due to immobile charge carriers present in the depletion region) will attract the electrons flowing in n type inversion layer.... as a result current will continue to flow even there is a break in the channel.....
Am I right sir?

[@mnada72]

@@ALLABOUTELECTRONICS can it be considered as diffusion current as that in the BJT from base to collector while reverse biased.

[@mayurshah9131]

Excellent 👍👍

[@m3r8k]

I dont understandddddd

[@mrigankadas1093]

Need topics on Thyristors DIACs TRIACs IGBTs

[@ALLABOUTELECTRONICS]

will also try to cover it on the channel.

[@प्रणव_गुप्ता]

Sir where u have used the term "Va" ?? And please explain what is Va ?

[@nguyenduyhung1000]

Va is early voltage i think

[@lontongtepungroti2777]

thank you very much :"))))

[@divyakumar8147]

thanks

[@yashjadhav2078]

if channel length decreases then there will be no channel between source and drain so Id current should decrease then why it is increasing

[@kesaripadmapriya1823]

good explonation

[@ahsansunnyas3304]

why cant decrease mosfet size

[@ashikmohammed8218]

add some examples or some problems for the above topic then it would be much better

[@ALLABOUTELECTRONICS]

Some are already covered. Please check the playlist.

[@N0W]

Thank you for uploading the video.
How do you know that, at 6:13, dL is proportional to Vd?

[@aamir99204]

Sir is this output resistance same as Rds on that we see in data sheet of mosfet?

[@ALLABOUTELECTRONICS]

No, RDS (ON) is the ON resistance between drain and source when MOSFET is operating in the triode region ( as a switch).

[@aamir99204]

@@ALLABOUTELECTRONICS thankyou Sir

[@rohittekchandani7778]

Thanks 👍👍

[@hafezhassani954]

Thank youuuuuuuuuuuuuuuuuu

[@madhav2214]

For problems involving channel length modulation,if we are asked to calculate transconductance then do we have to include CLM coefficient in the expression for gm or not?.....please do reply

[@ALLABOUTELECTRONICS]

If you are asking from small signal analysis perspective, I mean finding gm for small signal model, then in that case, no need to include CLM co-efficient while finding gm. Because, while deriving that model, the drain current is without considering CLM. (check at 9:30) And there is finite output resistance in parallel with the current source.(Its due to CLM)
I hope it will clear your doubt.

[@madhav2214]

@@ALLABOUTELECTRONICS Thanks a lot for clarifying it.

[@prabhubalajimanoharan4311]

Please Cover, TRIAC , DIACs, IGBT, THYRISTOR

[@harshaltayde7604]

Why still current flows after punch through effect.

[@ALLABOUTELECTRONICS]

Because at the edge of the channel, the electrons will get attracted by the electric field and reach the drain terminal. That's why although it appears that there is a break in the channel, the current continues to flow. I hope, it will clear your doubt.

[@basavarajn793]

Sir plz do on 8051 microcontrollers..

[@poojashah6183]

👌🏻👌🏻👍🏻

[@SUMANSHARMA-dg2ks]

Bro why you not making hindi videos

[@TheTanmaybishnoi]

Bigger Audience with English Videos

[@ahsansunnyas3304]

why cant decrease mosfet size