MOSFET- Channel Length Modulation Explained

[@ALLABOUTELECTRONICS]

Timestamps for the different topics covered in the video:
0:00 Introduction
0:15 What is channel length modulation in MOSFET
3:48 Drain current equation with channel length modulation effect
7:10 The output resistance with channel length modulation effect

[@ruinergaming7332]

short channel vs long channel

[@honeypaaturi9979]

What more suggestions could we give, you're just being the best........thank you so much sir.

[@mr.deepak._]

It's awesome than top engineering college lectures ❤

[@indrashispowali]

Thank you very much for such a beautiful explanation

[@krishnachidrawar8137]

lots of thanks for this video

[@vantuannguyen1004]

Hello!
What software do you use to write that, can you recommend it to me? Thank you

[@vinaykumarkv5830]

Good explaination ❤❤

[@mayurshah9131]

Excellent 👍👍

[@human_being9]

Thank you so much sir for this helpful video.

[@Mr.PandeyRishav]

Sir here why drain current will not be zero in saturation mode? Because during channel length modulation depletion region touches the oxide layer.. So it should block the path of drain current.. But practically drain current is not zero why?

[@ALLABOUTELECTRONICS]

Actually, at the edge of the channel, the electrons n the channel gets attracted by the electric field and reach the drain terminal. That's why although it appears that there is a break in the channel, the current continues to flow.
I hope it will clear your doubt.

[@Mr.PandeyRishav]

@@ALLABOUTELECTRONICS sir that means you want to say that electric field established near the drain terminal (due to immobile charge carriers present in the depletion region) will attract the electrons flowing in n type inversion layer.... as a result current will continue to flow even there is a break in the channel.....
Am I right sir?

[@mnada72]

@@ALLABOUTELECTRONICS can it be considered as diffusion current as that in the BJT from base to collector while reverse biased.

[@swaritmahalsekar5521]

Sir consider lambda as x, why (x' / L) * Vds is consider as (xL) * Vds? in equation at 6.38

[@anujparekh752]

Plz upload new topics video on MOSFET series quickly like with 3-4day gap between video rather than 1 week plz 🙏🙏
Because my exam is coming shortly and I have to coplate this subject
Thanks

[@ALLABOUTELECTRONICS]

I will try my best to upload as soon as possible.

[@freetime8521]

Thank u sir, this video is helpful

[@N0W]

Thank you for uploading the video.
How do you know that, at 6:13, dL is proportional to Vd?

[@ΣωτήρηςΤ-σ2ν]

- What’s the effect of increased VGS on RDS(on) in the saturation mode?

[@mrigankadas1093]

Need topics on Thyristors DIACs TRIACs IGBTs

[@ALLABOUTELECTRONICS]

will also try to cover it on the channel.

[@प्रणव_गुप्ता]

Sir where u have used the term "Va" ?? And please explain what is Va ?

[@nguyenduyhung1000]

Va is early voltage i think

[@IITianAbhaySrivastav]

one doubt is coming in my mind how the mosfet will work in pinch off condition as channel is pinched off there is no path for charge carriers thus no current should be there?

[@ALLABOUTELECTRONICS]

Because of electric force of the supplied voltage the electrons will be able to cross the channel.
For more information, please check the earlier video on enhancement type MOSFET: th-cam.com/video/l9LBIy9Ioxo/w-d-xo.htmlsi=-upaI7T3-wEMlUVP

[@p.krajput0601]

I think their should be mistake in graph because here our main conclusion is as we increase our Vds the current(Ids) should not change in ideal case and it should be more then the non-ideal case [we are getting lower Ids current than what we have expexted].......so i think your blue line should come above yellow line.

[@lontongtepungroti2777]

thank you very much :"))))

[@yashjadhav2078]

if channel length decreases then there will be no channel between source and drain so Id current should decrease then why it is increasing

[@kesaripadmapriya1823]

good explonation

[@m3r8k]

I dont understandddddd

[@ashikmohammed8218]

add some examples or some problems for the above topic then it would be much better

[@ALLABOUTELECTRONICS]

Some are already covered. Please check the playlist.

[@rohittekchandani7778]

Thanks 👍👍

[@divyakumar8147]

thanks

[@ahsansunnyas3304]

why cant decrease mosfet size

[@basavarajn793]

Sir plz do on 8051 microcontrollers..

[@prabhubalajimanoharan4311]

Please Cover, TRIAC , DIACs, IGBT, THYRISTOR

[@madhav2214]

For problems involving channel length modulation,if we are asked to calculate transconductance then do we have to include CLM coefficient in the expression for gm or not?.....please do reply

[@ALLABOUTELECTRONICS]

If you are asking from small signal analysis perspective, I mean finding gm for small signal model, then in that case, no need to include CLM co-efficient while finding gm. Because, while deriving that model, the drain current is without considering CLM. (check at 9:30) And there is finite output resistance in parallel with the current source.(Its due to CLM)
I hope it will clear your doubt.

[@madhav2214]

@@ALLABOUTELECTRONICS Thanks a lot for clarifying it.

[@harshaltayde7604]

Why still current flows after punch through effect.

[@ALLABOUTELECTRONICS]

Because at the edge of the channel, the electrons will get attracted by the electric field and reach the drain terminal. That's why although it appears that there is a break in the channel, the current continues to flow. I hope, it will clear your doubt.

[@poojashah6183]

👌🏻👌🏻👍🏻

[@hafezhassani954]

Thank youuuuuuuuuuuuuuuuuu

[@SUMANSHARMA-dg2ks]

Bro why you not making hindi videos

[@TheTanmaybishnoi]

Bigger Audience with English Videos

[@ahsansunnyas3304]

why cant decrease mosfet size