Hello, thank you for this video. When we use this CLM? When the use of the pinch off is important ? Thank you at advance for your time and for yours responses
Does the channel necessarily need to be tappered to enter in saturation mode. If so then why many authors have mentioned breaking of channel a disadvantage of e only mosfet.
during 1.00 to 1.10 you said that due to reverse bias the depletion region increases and so the channel will be narrower....what's the relation between reverse bias and channel size decrement?? and also why and how the electron density is reduced??
Short, concise and to the point, thanks a lot!
Probably the best explanation i came across
Excellent..way of teaching and best teacher...
short but very clear, easy to learn
Very good ,simple and easyway explanation ....🙂
Excellent, it helped me to refresh my concepts.
Excellent video.. Thank you so much
Very articulate explanation 👏🏻
Hello, thank you for this video. When we use this CLM? When the use of the pinch off is important ? Thank you at advance for your time and for yours responses
Very great explanation
Very nice explanation. Thank you
funny how you mentioned Knight and Day's "with me, without me" joke
sir you explained every concept in crystal clear, so please do a playlist on analog electronics subject for gate
Once again amazing video thank you sir. So clearly explained.
well explained
That was a great explanation !! i completely enjoyed it!
That's my edc knowledge with you and without you 😅
good explanation, but how how did (1-lamda)inverse turn to (1+lamda) in the final equation?
Binomial expansion
Very good
Very nicely explained...
Good explanation
Thank you Sai for the comment.
Does the channel necessarily need to be tappered to enter in saturation mode. If so then why many authors have mentioned breaking of channel a disadvantage of e only mosfet.
Thank you , you are great!!!!
during 1.00 to 1.10 you said that due to reverse bias the depletion region increases and so the channel will be narrower....what's the relation between reverse bias and channel size decrement?? and also why and how the electron density is reduced??
It's explained as part of previous videos : th-cam.com/video/ca07tvhsHsY/w-d-xo.html
Hope that helps.
@@techgurukula thnx sir...your suggestion made it easy for me to realize....
Excellent! Best video I've ever seen.
sir TWO question ...
why MOSFET's gate length gets decreased with time ?
and why MOSFET's gate capacitance gets changed with time ??
please reply ??
Thank you sir...!!!!!!!
Sir,here Vd>(Vgs-Vt), so why still Id formula contains Vgs-Vt term,
Insted of Vd term.
Hi Chidananda,
Once MOSFET reaches saturation (w/o CLM)
Id will be constant (independent of Vds) only dependent on Vgs-Vt
why does the current increase, i dont get it
Excellent
Sir ,please start communication series ,it would be very helpful for us
Where is concept in this video … blindly saying increase Vds channel pinchoff …
Sorry to say this but it was vey bad i couldn't understand crucial parts of it
I wish u were more clear about this topic
tumse na ho payega :(