Sir,if Fermi dirac function can b approximated to exponential term for moderate doping than how can we use exponential term in intrinsic carrier concentration equation?
For intrinsic carrier, Fermi Energy is in the mid, so obviously EC - EF >= 3kT and same with EF - EV. So the same approximation of Fermi integral applies for intrinsic carrier as well. Hope this clarifies.
@@mohdmonish3566 It will behave like a metal or inverse, not exactly metal, or we can say highly doped semiconductor till EF=EC, after that, they call it a degenerated semiconductor.
29:29 sir how that formula is applicable to intrinsic semiconductor ???? It was derived when there's moderate doping but in intrinsic semiconductor there's no doping .....then how can it be applied here ?????
its because even in case of no doping the condition given ie Ec-Ef>=3KbT is still satisfied.....so actually it was just not applicable to high doping, anything else works
sir has said Ec-Ef>3kt where k is boltzma constant but sir has said Ef-Ec ad i the f(E) eq also it is Ef-Ec so I am confused it is Ef-Ec or Ec-Ef anyone knows reply
Suuuuper sir we need much more topics by you😍
Nice explaination sir
Thank u so much
Nailed it bro, crystal clear explanation 👏👏👌👌
Bro???🤣
Dude he is a professor at IISc!
Bro???😡
Respect him...he is professor at IISc Bangalore
@@abhijitghosh6242 but iisc prof want to call them by their name , so if he says bro then faculty will be happy
Bro Kya Bol rha
Thanks a lot sir
Nice explanation... 👍...It's indeed a great help...
At 19:35 how can a electron exist in a forbidden energy band gap (i.e. in a donor energy level)?
amazing
Great explanation clear all dought
👌👌👌👌
sir plz clear the value of effective mass of holes ..and compare with effective v mass of electron..
Tell me if u get the answer
Sir,if Fermi dirac function can b approximated to exponential term for moderate doping than how can we use exponential term in intrinsic carrier concentration equation?
For intrinsic carrier, Fermi Energy is in the mid, so obviously EC - EF >= 3kT and same with EF - EV. So the same approximation of Fermi integral applies for intrinsic carrier as well. Hope this clarifies.
@29:43 Ef's got cancelled so no fermi stuff is involved
@@ManideepSegu thank you!!!
that actually clarifies it
what will happen if doping is high....? what will happen to the equation ? please explain
thank you
next lecture it is given
respected sir i have a dout ,,it EF=EV then what is the type of material..same for Ef=Ec ,.thank you
@Anish singh rajput, if EF=Ev, then it will be an insulater, if Ef=Ec it will be a metal( conductor)
@@mohdmonish3566 It will behave like a metal or inverse, not exactly metal, or we can say highly doped semiconductor till EF=EC, after that, they call it a degenerated semiconductor.
Just FATAFATI
29:29 sir how that formula is applicable to intrinsic semiconductor ???? It was derived when there's moderate doping but in intrinsic semiconductor there's no doping .....then how can it be applied here ?????
I have the exact same question can anyone please clarify
Even I have the exact same question !!!
@nptel-indianinstituteofsci8064 Can you please clarify
its because even in case of no doping the condition given ie Ec-Ef>=3KbT is still satisfied.....so actually it was just not applicable to high doping, anything else works
good work
Awesome
sir please share the ppts or pdf
sir has said Ec-Ef>3kt where k is boltzma constant but sir has said Ef-Ec ad i the f(E) eq also it is Ef-Ec so I am confused it is Ef-Ec or Ec-Ef anyone knows reply
It is Ef-Ec.
Sir please say reference book for lectures
Street man and Banerjee