Sir, I'm a semiconductor engineer now, and have learned these at school. But watching your videos helps me have much more profound understanding of SRAM. Really appreciate your videos!
Hi Mukku. Please elaborate. In general, you just choose a corner in the model file and run a simulation (for global corners) and run a Monte Carlo simulation (for local variations). But there are an infinite number of things you can measure and methods for measuring them. Many of them are explained in the video series (Lecture 8), but if you need something specific, please ask.
Hi, The link isn't available, since the university has blocked access for IPs originating outside of Israel for security purposes. I have uploaded my lecture slide to a sharepoint drive in the meantime, so you can access them here: biu365-my.sharepoint.com/:f:/g/personal/temanad_biu_ac_il/EuORrTC7arlEn3S9M-0q2fEBd5DnUUiMIJ6DFd6cCPl4zw?e=aUktHb
In this context, the "feedback" means that when I drive a signal forward (i.e., from Q to QB), there is a response coming back ("feeding back"), i.e., from QB to Q. In a negative feedback system, we usually dampen the signal, whereas in a positive feedback system, the signal is amplified. In the case of SRAM, there is positive feedback, amplifying the signal until it saturates at the rails (VDD or GND). Note that most control systems require negative feedback to stabilize a signal, whereas positive feedback is very bad, as it can cause the system to "explode". But in this case, the signal is limited by the voltage rails (VDD/GND), and so the positive feedback is not "dangerous" and in the case of an SRAM cell, it is highly advantageous.
Sir, I'm a semiconductor engineer now, and have learned these at school. But watching your videos helps me have much more profound understanding of SRAM. Really appreciate your videos!
Glad to hear that
Sir, you are doing the community a real service
Thank you for the appreciation.
Thank you sir, your explanation is very easy to understand
You are most welcome
Great explaination, Great thanks from China.
You are welcome!
Great explanation sir... i ever saw a best way of explaining like this. keep going more topics sir.
Thanks!
@@AdiTeman can you help me out, how i do process corner and monte carlo analysis for basic 6T in cadence.
Hi Mukku.
Please elaborate.
In general, you just choose a corner in the model file and run a simulation (for global corners) and run a Monte Carlo simulation (for local variations). But there are an infinite number of things you can measure and methods for measuring them. Many of them are explained in the video series (Lecture 8), but if you need something specific, please ask.
sir i am not able to access your lecture slide please help me
Hi,
The link isn't available, since the university has blocked access for IPs originating outside of Israel for security purposes.
I have uploaded my lecture slide to a sharepoint drive in the meantime, so you can access them here:
biu365-my.sharepoint.com/:f:/g/personal/temanad_biu_ac_il/EuORrTC7arlEn3S9M-0q2fEBd5DnUUiMIJ6DFd6cCPl4zw?e=aUktHb
@@AdiTeman thanks sir
Thank you very much sir!
what is the meaning of positive feedback here?
In this context, the "feedback" means that when I drive a signal forward (i.e., from Q to QB), there is a response coming back ("feeding back"), i.e., from QB to Q.
In a negative feedback system, we usually dampen the signal, whereas in a positive feedback system, the signal is amplified. In the case of SRAM, there is positive feedback, amplifying the signal until it saturates at the rails (VDD or GND). Note that most control systems require negative feedback to stabilize a signal, whereas positive feedback is very bad, as it can cause the system to "explode". But in this case, the signal is limited by the voltage rails (VDD/GND), and so the positive feedback is not "dangerous" and in the case of an SRAM cell, it is highly advantageous.
GREAT!!! Thanks very much!!!!
You are welcome!
1984 ❤