Have to watch analog electronics videos at 1.25x speed. And the near 150 videos here are just about 4 topics out of about 8 taught in a single semester. And I used to consider class 11 to be tough!
Respected neso academy management. I have gone through almost all video lectures of neso academi, the way of explanation of 90% of all topics are awesome, my sincere request is, sir if possible please up load EMTL and VLSI DESIGN videos.
sir, at 11:50 you've told that the breakdown voltage may increase or decrease with temperature depending upon the zener potential. So what is is the difference between the breakdown voltage and zener voltage? Are they same things?
Thank you for the awesome lectures.One request from you sir can you please calculate the reverse saturation current when we decrease the temperature that is at -75 C.It will be really helpful for me.
@@hadiaamin1466 in your answer where u got Is= 9.765635pA in -75°c.. is not possible..Bro... (Is) should be 10pA when increase temperature . In here u will reduce the temperature... In my calculations.. in -75°c Is= 0.009 nA or, 9×10^-6uA or 0.000009 microampere
Vb is barrier potential,we are drawing graph with Vd which is diode potential, the potential we apply to the circuit. Also the potential directly proportional to temp is Vt,the thermal potential.
In RB if temp. Increases then current should increase. Here for 25° current is 10nA for 125 ° it is 10.24 microA. Then for hight temp applications why current is in picoA. It should be milliA or A right???
sir,as temperature is increasing vt should increse as a result barrier potential should increase.so as themperature increases graph should shift towards right not left
Hi,I have a query regarding the temperature coefficient of Silicon diode. You have stated that for forward bias of silicon diode, there is an increase of 2.5mV/degree centigrade. However the book I'm reading from M. H.Rashid ,Microelectronic Circuits: Analysis & Design,2nd Edition (2011) states that its -2mV/ degree centigrade for silicon diode. Is this temperature coefficient variable for each silicon diode?Thanks
I had a similar doubt. What I found is as temp increases, Drift current increase( much more than diffusion current), If we reduce FB voltage then current can be brought down to its previous value. So for the same I, a lower voltage is needed, hence the plot moves towards left at 2mV/ degree or -2mV/ degree.
In the last of video, we have compared Ge, Si, GaAs Ge has High reverse saturation current so it is limited in use Why is it so? How reverse saturation current effect use of it and on what parameters it will affect?? Can you describe it??
I'm not sure but the purpose of diode is to make current to flow in one direction and if the diode have high reverse saturation current that means it is allowing the current to flow even in reverse direction. High reverse breakdown voltage is favorable but not high reverse saturation current . Correct me if I'm wrong😇.
according to the formula of Vb =(kT/e)*ln(Na*Nb/ni^2) here we can clearly see that the barrier potential is directly proportional to the temperature then how come the opposite is happening in case of forward biased condition? Please explain
But in the video about Barrier Potential the formula is : Vb = (kT/e)*ln|(NA*ND)/ni^2|, so if the T increases so does Vb ???? and here its the opposite ?
Sir, really your videos are awesome.. you are doing great job sir.. I have seen your digital electronics lecture.. that was very useful for ma gate preparation.. pls upload more videos on analog electronics, especially on op amp..
The scale of Diode current (Id) is decreasing from milliAmps to microAmps............. so, how come the diode current increase at 125 degrees will be at bottom in grapg if diode current double for temperature increase..................
but you said in the previous lectures that the potential barrier is proportional to the temperature so the more the temperature increases the more the graph will be shifted toward the right, not to the left ! I'm really confused !?
Shreya Baranwal Breakdown voltage depends on temperature coefficient. In zener breakdown temperature coefficient is negative so by increasing temperature breakdown voltage decrease and in avalanche breakdown temperature coefficient is positive so by increasing temperature breakdown voltage increase Both breakdown have different machnism so it happen.
Muhammad Aqeel The Ge valence e-s are at a higher energy level than those in silicon. Therefore they require smaller amount of additional energy to escape from the atom and become free e-s. Thus the no. of minority carriers generated due to temperature will be higher in Ge and hence the reverse saturation current will be greater.
samiya murtuza Breakdown voltage depends on temperature coefficient. In zener breakdown temperature coefficient is negative so by increasing temperature breakdown voltage decrease and in avalanche breakdown temperature coefficient is positive so by increasing temperature breakdown voltage increase Both breakdown have different machnism so it happen.
I=IS∗(exp((V/(n∗k∗T/q)))-1) Hence from equation we conclude that the current should decrease with increase in temperature but exactly opposite occurs there are two reasons: Rise in temperature generates more electron-hole pair thus conductivity increases and thus increase in current Increase in reverse saturation current with temperature offsets the effect of rise in temperature Reverse saturation current (IS) of diode increases with increase in the temperature the rise is 7%/ºC for both germanium and silicon and approximately doubles for every 10ºC rise in temperature. Thus if we kept the voltage constant, as we increase temperature the current increases. Barrier voltage is also dependent on temperature it decreases by 2mV/ºC for germanium and silicon. Reverse breakdown voltage (VR) also increases as we increase the temperature.
I am sorry but I din't get any sort of physics in your answer. I was looking for thermionic emission and the effect of minority carrier distribution with change in temperature but got some numerical only.
Have to watch analog electronics videos at 1.25x speed. And the near 150 videos here are just about 4 topics out of about 8 taught in a single semester. And I used to consider class 11 to be tough!
Respected neso academy management.
I have gone through almost all video lectures of neso academi, the way of explanation of 90% of all topics are awesome, my sincere request is, sir if possible please up load EMTL and VLSI DESIGN videos.
At 5:44, the ans should be 0.45 not 0.35.
Right
Right
Right
Right
Right
if we see like this teaching we get more interest on hated subjects thank you so much
@ 5:49 Vd=0.45V
Thankyou☺
sir, at 11:50 you've told that the breakdown voltage may increase or decrease with temperature depending upon the zener potential. So what is is the difference between the breakdown voltage and zener voltage? Are they same things?
nice video.I have one doubt,for normal pn diode(not zener) what is variation of reverse bias voltage with increase in temp?
Thank you sir for all yr awesome videos.The explanation is very clear and lucid in all.sir, you are doing great job..just keep doing.Thanks again.
thank u sir ,I clarified my droughts by watching this video, these videos are very help full to students,thanks sir
Doubts*
Thank you for the awesome lectures.One request from you sir can you please calculate the reverse saturation current when we decrease the temperature that is at -75 C.It will be really helpful for me.
Rashmi Sharma you can half reverse saturation current for every 10°C decrease in temp... I got Is= 0.009765625 nA or 9.765625 pA at -75°C
@@hadiaamin1466 you worng bro
@@hadiaamin1466 in your answer where u got Is= 9.765635pA in -75°c.. is not possible..Bro...
(Is) should be 10pA when increase temperature . In here u will reduce the temperature...
In my calculations.. in -75°c Is= 0.009 nA or, 9×10^-6uA or 0.000009 microampere
Since Vb is directly proportional to T, shouldnt the graph shift towards right in case of rise of temperature?
I have the same doubt.
Vb is barrier potential,we are drawing graph with Vd which is diode potential, the potential we apply to the circuit. Also the potential directly proportional to temp is Vt,the thermal potential.
Awesome sir it's perfect.
Thank for it.
In RB if temp. Increases then current should increase.
Here for 25° current is 10nA for 125 ° it is 10.24 microA.
Then for hight temp applications why current is in picoA. It should be milliA or A right???
Thank you sir very nice gide & very nice best explain temperature effect teaching video.👍
Sir, why would the breakdown voltage changes on changing the temp.
sir,as temperature is increasing vt should increse as a result barrier potential should increase.so as themperature increases graph should shift towards right not left
But plot is for applied potential not for barrier potential
Sir is there any notes regarding all these video lectures. If so provide me a link. It will be very helpful.
Hi,I have a query regarding the temperature coefficient of Silicon diode. You have stated that for forward bias of silicon diode, there is an increase of 2.5mV/degree centigrade. However the book I'm reading from M. H.Rashid ,Microelectronic Circuits: Analysis & Design,2nd Edition (2011) states that its -2mV/ degree centigrade for silicon diode. Is this temperature coefficient variable for each silicon diode?Thanks
I had a similar doubt.
What I found is as temp increases, Drift current increase( much more than diffusion current), If we reduce FB voltage then current can be brought down to its previous value. So for the same I, a lower voltage is needed, hence the plot moves towards left at 2mV/ degree or -2mV/ degree.
In the last of video, we have compared Ge, Si, GaAs
Ge has High reverse saturation current so it is limited in use
Why is it so?
How reverse saturation current effect use of it and on what parameters it will affect??
Can you describe it??
I'm not sure but the purpose of diode is to make current to flow in one direction and if the diode have high reverse saturation current that means it is allowing the current to flow even in reverse direction.
High reverse breakdown voltage is favorable but not high reverse saturation current . Correct me if I'm wrong😇.
it's leakage current is high and we need to have diode with minimum leakage current that is silicon diode.
is there a way to avoid temp changes on diode by using less voltage?
How is voltage related to temperature change
can u explain th logic behind shifting of graph towards left in Fb and Rb??
according to the formula of Vb =(kT/e)*ln(Na*Nb/ni^2) here we can clearly see that the barrier potential is directly proportional to the temperature then how come the opposite is happening in case of forward biased condition? Please explain
Yeah I have the same question !
With increase in them. ni should also increase...and it will increase at squared rate....Vb value might decrease
please share the variation of breakdown voltage with change in temp?
But in the video about Barrier Potential the formula is : Vb = (kT/e)*ln|(NA*ND)/ni^2|, so if the T increases so does Vb ???? and here its the opposite ?
Sir, really your videos are awesome.. you are doing great job sir.. I have seen your digital electronics lecture.. that was very useful for ma gate preparation.. pls upload more videos on analog electronics, especially on op amp..
nikla gate?
thanks for learning me but the colour marker is not visible clearly
Sir how to calculate Is value for reverse bias quickly
very effective lecture
Intro music is lovely ❤️😘
thanks for your videos ,sir
can u explain what happens inside the pn junction diode during this processes ??
can the barrier voltage also be forward voltage drop
sir, 5:42 me 0.45V ayega na VD
The scale of Diode current (Id) is decreasing from milliAmps to microAmps.............
so, how come the diode current increase at 125 degrees will be at bottom in grapg if diode current double for temperature increase..................
As temperature increases...the kinetic energy increases so the break down voltage to come closer to y axis right
sir,can you explain what is zener potential?
but you said in the previous lectures that the potential barrier is proportional to the temperature so the more the temperature increases the more the graph will be shifted toward the right, not to the left ! I'm really confused !?
Sir your doing great job sir.
Breakdown voltage may increase or decrease with temperature depending on the Zener potential, what do you mean by this? What is zener potential here?
Shreya Baranwal
Breakdown voltage depends on temperature coefficient.
In zener breakdown temperature coefficient is negative so by increasing temperature breakdown voltage decrease and in avalanche breakdown temperature coefficient is positive so by increasing temperature breakdown voltage increase
Both breakdown have different machnism so it happen.
Will you please explain the complete mechanism of this difference in temp coeff.. between zener and avalanvche..
thanks
how does zener potential effect the breakdown potential
what is zener potential?
Are the relationships same for ge diode??
sir can you plz make a superfast compilation video for quick revision during exams like 30 videos in 1hour 30 min or something
Which material has Is=10 pA?
can u show how germinium' saturation current is greater than si
Muhammad Aqeel The Ge valence e-s are at a higher energy level than those in silicon. Therefore they require smaller amount of additional energy to escape from the atom and become free e-s. Thus the no. of minority carriers generated due to temperature will be higher in Ge and hence the reverse saturation current will be greater.
Can you please share the slides in pdf form
What's the reason for shift though?
sir, can I get the lab manual?
Sir in video no. 16 you didn't tell that , by what factor reverse saturation current decreases if we decrease the temperature by 10°C or more ??
This is in eV or v?
you've told that the breakdown voltage may increase or decrease with temperature depending upon the zener potential. So plz explain how not clear
samiya murtuza
Breakdown voltage depends on temperature coefficient.
In zener breakdown temperature coefficient is negative so by increasing temperature breakdown voltage decrease and in avalanche breakdown temperature coefficient is positive so by increasing temperature breakdown voltage increase
Both breakdown have different machnism so it happen.
But sir in previous video....in barrier potential formula.....the Vd was directly proportional to Temp....bt in this video its opposite.....why??
I=IS∗(exp((V/(n∗k∗T/q)))-1)
Hence from equation we conclude that the current should decrease with increase in temperature but exactly opposite occurs there are two reasons:
Rise in temperature generates more electron-hole pair thus conductivity increases and thus increase in current Increase in reverse saturation current with temperature offsets the effect of rise in temperature Reverse saturation current (IS) of diode increases with increase in the temperature the rise is 7%/ºC for both germanium and silicon and approximately doubles for every 10ºC rise in temperature.
Thus if we kept the voltage constant, as we increase temperature the current increases. Barrier voltage is also dependent on temperature it decreases by 2mV/ºC for germanium and silicon.
Reverse breakdown voltage (VR) also increases as we increase the temperature.
Can u explain why
u didn't tell the reason why is it so because according to shooflet equation current should decrease with increase in temperature
Anant Jain The no. of generated carriers increase with increase in temp, thats why the reverse saturation current increases
why germaniun has high saturation current as compare to silicone
Thaks a Lot Sir
sir Thanx a lot for ur videos. it is very knowledge ful videos
To be honest even my lecturers watch your videos , how funny is this 😪
How comes at 125degree=10240??
At 6:10 it is 0.45v
at 11:08 result is 5120 not 10240
Lol.. stupid....
.it's 115°c Is is 5120nA
In 125°c Is is 10240 nA
Explain 2 markes Questions in Each Lesson sir
@ 5:45
5:44 ans is .45
In starting of the video I feel like I'm entering in a jungle 😅
I am sorry but I din't get any sort of physics in your answer. I was looking for thermionic emission and the effect of minority carrier distribution with change in temperature but got some numerical only.
🔥🔥🔥
nice
0.45 Hoga.. Sir
show the math for the 100-degree centigrade drop in temp at (-75 degree)
Lol
In my calculations.. in -75°c Is= 0.009 nA or, 9×10^-6pA or 0.000009 pA
Change background screen to white or some other colour
Sir please don't use red colour. Because this colour is low thickness
0.45 sir
Sir it would be 0.45 not 0.35 ...
At 10.57 reverse saturation current would be 5120 nA or 5.120 microA
Lol.. stupid....
.it's 115°c Is is 5120nA
In 125°c Is is 10240 nA
Whyyy???
25degree pr 0.7 value kse ayi
Let's assume bro
Sir 0.45 hoga
0.45 v
NEW V0 IS 0.45V NOT 0.35V
.7-.25=.45
Sir 0.7-0.25 is 0.45
.45 not.35
❤
vd = 0.45 V 😑
so badddd*
Sir in video no. 16 you didn't tell that, by what factor reverse saturation current decreases if we decrease the temperature by 10°C or more ??