Hello Professor Sam! Thanks for the video, very educational! It would be very cool if you touch GDT driver too. I know it's not so common today, since we got better solutions for driving, but still, I think it is a good subject if not for using such application but at least for learning purposes.
Hi Sam, I am a chip designer myself and I enjoy your lectures. There are two other ways to do that one using capacitor another using current mirror. In case of capacitor you charge a cap, which is several times the gate cap, to Vsup and when you want to turn off the MOS you connect the positive terminal of this cap to ground with a switch and the negative terminal to the gate of the output transistor. This pulls the gate of the output transistor to negative voltage very fast ( depending on your switch resistance) and turn off your output MOS fast. Then when the mos has turned off completely you connect the gate to Ground and keep it there. When you want to turn on the output MOS you charge the same cap and then switch the negative terminal of the CAP to the Vsup and the positive terminal to Gate of output MOS. After the MOS completely turned on you connect the gate to Vsup . I case of current mirror, you make sure the one of the driver transistor is off before you turn on the other one (Break before Make). of course this means the driver transistor gates are not connected together and driven separately. Also, put parallel caps with your R3 & R4 to help reduce Miller capacitance effect and faster switching.
Hello Sir, I am an EEE student, I also find Mr. Ben-Yaakov video's very enjoying. I read that you work as a chip designer which I respect! When I have an opportunity to ask a professionalist a question, I always ask for his favorite book or paper, something from which he enjoyed learning. Would you please share your favorite source of information about electronics? I am particularly interested in analog design.
@@hidennseek1483 Hi, There are many books, I started with hobby electronics books and magazines when I was child then In undergraduate I had some theoretical books , which were interesting then when I was getting my Ph. D. I had many more books with great deal of mathematical and theoretical background. I would start with your university books. I would start with this: Microelectronic Circuits by Adel S. Sedra (Author), Kenneth C. (KC) Smith (Author), Tony Chan Carusone (Author), Vincent Gaudet (Author) For analog circuit design I love Razavi's books he is very logical here are some of his excellent books: * Design of Analog CMOS Integrated Circuits * Fundamentals of Microelectronics * RF Microelectronics * Design of CMOS Phase-Locked Loops: From Circuit Level to Architecture Level * High-Speed CMOS Circuits for Optical Receivers * Design of Integrated Circuits for Optical Communications Also: Analog Integrated Circuit Design by David Johns Analysis and Design of Analog Integrated Circuits by by Paul R. Gray (Author), Paul J. Hurst (Author), Stephen H. Lewis (Author), Robert G. Meyer (Author) For RF and microwave: The Design of CMOS Radio-Frequency Integrated Circuits by Thomas H. Lee Microwave Engineering by David M. Pozar For Power circuits ( switching convertors): Fundamentals of Power Electronics by Robert W. Erickson and Dragan Maksimovic For LDO design: Analog IC Design with Low-Dropout Regulators (LDOs) by Gabriel Rincon-Mora For Quantum electronics: Quantum Electronics by YARIV, AMNON For PLL: Phase Locked Loops 6/e: Design, Simulation, and Applications by Roland Best Also checkout: th-cam.com/channels/5GfjOd8g8HwJwus8dbaBAQ.html
@@aduedc Sir, Thank you very much for taking your time to compile such a nice list! I am already familiar with ''Fundamentals of Power Electronics'' as my power electronics course was based on this book which was nice to see it as part of your list. However, I was not familiar with Razavi's books and many others which I will get into strayed away! Thanks again, I do appreciate it!
Good explanation but I as a new engineer I try alot of data and experiments to get mosfet drive really will with no heat up I notice that resistor don’t turn off the mosfets fully causing heating but not bad heating just warming but this is very bad efficiency so I try using bjt pnp to be exact at each gate of 6 mosfets and the pnp turn off the mosfets fully and the mosfet was really cold at 200watt for 5 minutes and 1 hour the mosfets was fairly warm and at 2 hour the temperature didn’t get pass 28degree % but when I use back the resistor at 1k to 10k the mosfets heating up really badly and I never seen a commercial inverter with my design and my design work 99 % more efficient on terminal temperature controller
Dear sir, In this video at last minute you told, you was performing integration to get charge. Can you please put one video to explain us how to perform integration and differentiation in Ltspice.
He got the integral by adding a circuit called an integrator to the simulation he ran. Both integrators and differentiators are critical to all sorts of electronic circuits and they are among the most basic. I recommend starting here: en.wikipedia.org/wiki/Differentiator en.wikipedia.org/wiki/Integrator
Sir, Thank you so much for this very clearly presented example. I was using a simple BJT push-pull to drive my power mosfets with logic level PWM (with a few performance issues) but now feel inspired to experiment with simple mosfet based gate driver and perhaps learn a bit more.
Hello Sam, Thanks a lot for these lecture series which is very helpful from a practical engineering point of view. I need one clarification. Won't this configuration be inherently inverting? (V1 and V(CAP)). Would you recommend (1)one more stage of mosfets before the main totempole , (2) just by swapping the high side and low side PWM signals (assuming they are complementary) at gate driver input (3) or swapping inside microcontroller.
Indeed, this is an inverting stage . The best will be to judt add an inverter Swapping the signals not exactly inverting due to the dead time but if accounted for, it should be OK. If digital control us used, there is no problem to program as needed. Hold on to my forthcoming video on driver buffer/.
I'd like to use an ESP32 to control a power MOSFET to switch on and off a 12V 5A load (led strips, no PWM), but with the idea of reducing the power losses as much as possible, as the system would be powered on 24/7. What would be the best gate driver for my application? Since I don't need a fast turn on or off switching sequence, I guess I can get away by inserting a high Rg1 resistor as to avoid a large constant current (I=Vcc/(Rg1+Rg2)) through both MOSFETs when the control signal is HIGH (both MOSFETs on)
@@sambenyaakov I'm planning to use a regular 12V PSU to power both the LED strips and the ESP32, using a buck converter for the latter. I don't think I need isolation, but I do want to have the lowest Rdson possible to reduce power losses as much as possible, so that means driving the MOSFET from 12V. At first I thought about simply using an optocoupler but I'm not sure what's the minimum power it needs. Another option is simply driving the gate with an NPN transistor. With a 100k resistor on the collector, I'd have a constant wasted 120 uA (1.44mW) while the power MOSFET is off. I wonder if this could be reduced even further.
@@alejandroperez5368 Yo can use an N channel with 1Meg to 12V and a P channel from 12 volt to gate of power transistor with the gate of P connected to the drain of N. Then you need a 100kOhm from gate of power transistor to ground. This way the drive consumption is only at ON.
Hello, I can’t find information about "active balancers of li ion batteries on capacitors" In particular, I'm trying to find a diagram where it would be clear which chips are used to control the mosfets. Can you help me?
@@sambenyaakov Yes, I watched this video, but just in it it was not indicated which "driver" can be used for such needs. If i buy a ready -made balancer, then there are all microchips without designation.
@@sambenyaakov 10:53, where you introduce the integration analysis for charge. You say that the total gate current is being integrated, and highlight the inductor with your mouse, but the behavioural source appears to be using I(R3) not I(L1).
@@sambenyaakov Is the dI/dt from the parasitic spike significantly faster than the dI/dt at the fastest edge of the normal gate drive transitions? More to the point, is that parasitic spike likely to cause radiative EMI of a greater amplitude than that of normal operation? Would it make sense to add a small inductor or ferrite bead in series with the gate drive resistors to moderate that dI/dt, or would that cause undesirable effects? I suppose with too much gate inductance/impedance the MOSFET will spend more time in the ohmic region, but I wonder if there is a "sweet spot".
Dear Prof the simulation at 8.42 is not giving the results as you have shown .Could you please confirm the correctness of Later MOSFET part of the cirucuit that was added onthe first simulation u have shown
Thank you very much for you video. I have one question here; in many datasheet of drivers, they use also the Push pull with Mosfet shown here (www.analog.com/media/en/technical-documentation/data-sheets/adum4146.pdf) page 3; sorry can not paste here the picture; they use the one Mosfe of high side push pull; but two Mosfets in the low side; The drive signals of the two low side Mosfets are different. Do you know why the use like this ? thank you sir
Hello Professor Sam! Thanks for the video, very educational! It would be very cool if you touch GDT driver too. I know it's not so common today, since we got better solutions for driving, but still, I think it is a good subject if not for using such application but at least for learning purposes.
Thanks for input. Will see
Hi Sam, I am a chip designer myself and I enjoy your lectures. There are two other ways to do that one using capacitor another using current mirror. In case of capacitor you charge a cap, which is several times the gate cap, to Vsup and when you want to turn off the MOS you connect the positive terminal of this cap to ground with a switch and the negative terminal to the gate of the output transistor. This pulls the gate of the output transistor to negative voltage very fast ( depending on your switch resistance) and turn off your output MOS fast. Then when the mos has turned off completely you connect the gate to Ground and keep it there. When you want to turn on the output MOS you charge the same cap and then switch the negative terminal of the CAP to the Vsup and the positive terminal to Gate of output MOS. After the MOS completely turned on you connect the gate to Vsup . I case of current mirror, you make sure the one of the driver transistor is off before you turn on the other one (Break before Make). of course this means the driver transistor gates are not connected together and driven separately. Also, put parallel caps with your R3 & R4 to help reduce Miller capacitance effect and faster switching.
Hello Sir, I am an EEE student, I also find Mr. Ben-Yaakov video's very enjoying. I read that you work as a chip designer which I respect! When I have an opportunity to ask a professionalist a question, I always ask for his favorite book or paper, something from which he enjoyed learning. Would you please share your favorite source of information about electronics? I am particularly interested in analog design.
@@hidennseek1483 Hi, There are many books, I started with hobby electronics books and magazines when I was child then In undergraduate I had some theoretical books , which were interesting then when I was getting my Ph. D. I had many more books with great deal of mathematical and theoretical background.
I would start with your university books.
I would start with this:
Microelectronic Circuits by Adel S. Sedra (Author), Kenneth C. (KC) Smith (Author), Tony Chan Carusone (Author), Vincent Gaudet (Author)
For analog circuit design I love Razavi's books he is very logical here are some of his excellent books:
* Design of Analog CMOS Integrated Circuits
* Fundamentals of Microelectronics
* RF Microelectronics
* Design of CMOS Phase-Locked Loops: From Circuit Level to Architecture Level
* High-Speed CMOS Circuits for Optical Receivers
* Design of Integrated Circuits for Optical Communications
Also:
Analog Integrated Circuit Design by David Johns
Analysis and Design of Analog Integrated Circuits by by Paul R. Gray (Author), Paul J. Hurst (Author), Stephen H. Lewis (Author), Robert G. Meyer (Author)
For RF and microwave:
The Design of CMOS Radio-Frequency Integrated Circuits by Thomas H. Lee
Microwave Engineering by David M. Pozar
For Power circuits ( switching convertors):
Fundamentals of Power Electronics by Robert W. Erickson and Dragan Maksimovic
For LDO design:
Analog IC Design with Low-Dropout Regulators (LDOs) by Gabriel Rincon-Mora
For Quantum electronics:
Quantum Electronics by YARIV, AMNON
For PLL:
Phase Locked Loops 6/e: Design, Simulation, and Applications by Roland Best
Also checkout:
th-cam.com/channels/5GfjOd8g8HwJwus8dbaBAQ.html
Hi, Thanks for sharing your interesting experience and for conversation.
@@aduedc Sir, Thank you very much for taking your time to compile such a nice list! I am already familiar with ''Fundamentals of Power Electronics'' as my power electronics course was based on this book which was nice to see it as part of your list. However, I was not familiar with Razavi's books and many others which I will get into strayed away! Thanks again, I do appreciate it!
@@sambenyaakov Thanks for posting great lectures online. I learned lots of new things from you.
Amazing video again Professor Sam, thank you very much!
Thanks
Great Video, prof!
Thank you!
very good
thank you mr professor
Thanks
Good explanation but I as a new engineer I try alot of data and experiments to get mosfet drive really will with no heat up I notice that resistor don’t turn off the mosfets fully causing heating but not bad heating just warming but this is very bad efficiency so I try using bjt pnp to be exact at each gate of 6 mosfets and the pnp turn off the mosfets fully and the mosfet was really cold at 200watt for 5 minutes and 1 hour the mosfets was fairly warm and at 2 hour the temperature didn’t get pass 28degree % but when I use back the resistor at 1k to 10k the mosfets heating up really badly and I never seen a commercial inverter with my design and my design work 99 % more efficient on terminal temperature controller
1k i too large. Typically 10\- 10Ohms are used since you need substantial current to feed to the gate. See: th-cam.com/video/of_v2N5f788/w-d-xo.html
Really nice! Thank you
Thanks
Dear Dr. Sam,
Kindly try to explain to us, in a video presentation, the push pull DC DC converter with its applications.
Really Useful.
🙏🙂
Outstanding. 🤗
Thanks Hamid
very interesting as usual, thanks 😊
Thanks
Dear sir,
In this video at last minute you told, you was performing integration to get charge. Can you please put one video to explain us how to perform integration and differentiation in Ltspice.
Thanks for comment. Will try.
He got the integral by adding a circuit called an integrator to the simulation he ran. Both integrators and differentiators are critical to all sorts of electronic circuits and they are among the most basic. I recommend starting here:
en.wikipedia.org/wiki/Differentiator
en.wikipedia.org/wiki/Integrator
Super 💥
Thank you 🙂
Sir, Thank you so much for this very clearly presented example. I was using a simple BJT push-pull to drive my power mosfets with logic level PWM (with a few performance issues) but now feel inspired to experiment with simple mosfet based gate driver and perhaps learn a bit more.
Glad it helped. Thanks for comment
I like it :)
Thanks
Hello Sam,
Thanks a lot for these lecture series which is very helpful from a practical engineering point of view.
I need one clarification.
Won't this configuration be inherently inverting? (V1 and V(CAP)).
Would you recommend (1)one more stage of mosfets before the main totempole , (2) just by swapping the high side and low side PWM signals (assuming they are complementary) at gate driver input (3) or swapping inside microcontroller.
Indeed, this is an inverting stage . The best will be to judt add an inverter Swapping the signals not exactly inverting due to the dead time but if accounted for, it should be OK. If digital control us used, there is no problem to program as needed. Hold on to my forthcoming video on driver buffer/.
@@sambenyaakov looking forward to your new video. Inverting in program, wont it mess with desat or shoot through protection of the semiconductor?
How can we make the gate pin negative 9 volts while the MOSFET stops conducting electricity? Help me make a video thank you.
You need a bipolar power supply.
I'd like to use an ESP32 to control a power MOSFET to switch on and off a 12V 5A load (led strips, no PWM), but with the idea of reducing the power losses as much as possible, as the system would be powered on 24/7.
What would be the best gate driver for my application? Since I don't need a fast turn on or off switching sequence, I guess I can get away by inserting a high Rg1 resistor as to avoid a large constant current (I=Vcc/(Rg1+Rg2)) through both MOSFETs when the control signal is HIGH (both MOSFETs on)
Why two MOSFETs? Is your load referred to ground or connected to the
12V supply? You need isolation?
@@sambenyaakov I'm planning to use a regular 12V PSU to power both the LED strips and the ESP32, using a buck converter for the latter. I don't think I need isolation, but I do want to have the lowest Rdson possible to reduce power losses as much as possible, so that means driving the MOSFET from 12V.
At first I thought about simply using an optocoupler but I'm not sure what's the minimum power it needs.
Another option is simply driving the gate with an NPN transistor. With a 100k resistor on the collector, I'd have a constant wasted 120 uA (1.44mW) while the power MOSFET is off. I wonder if this could be reduced even further.
@@alejandroperez5368 Yo can use an N channel with 1Meg to 12V and a P channel from 12 volt to gate of power transistor with the gate of P connected to the drain of N. Then you need a 100kOhm from gate of power transistor to ground. This way the drive consumption is only at ON.
Hello, I can’t find information about "active balancers of li ion batteries on capacitors"
In particular, I'm trying to find a diagram where it would be clear which chips are used to control the mosfets.
Can you help me?
Have you seen this? th-cam.com/video/BRezuwQCaKI/w-d-xo.html
@@sambenyaakov Yes, I watched this video, but just in it it was not indicated which "driver" can be used for such needs. If i buy a ready -made balancer, then there are all microchips without designation.
I notice that you said you were integrating the current at the inductor, but the simulation used I(R3) not I(L1). Was that a mistake?
To which minute in the video are you referring to?
@@sambenyaakov 10:53, where you introduce the integration analysis for charge. You say that the total gate current is being integrated, and highlight the inductor with your mouse, but the behavioural source appears to be using I(R3) not I(L1).
Will those current spike (green and red trace) and extra current spikes create EMI issues?
Indeed
@@sambenyaakov Is the dI/dt from the parasitic spike significantly faster than the dI/dt at the fastest edge of the normal gate drive transitions? More to the point, is that parasitic spike likely to cause radiative EMI of a greater amplitude than that of normal operation?
Would it make sense to add a small inductor or ferrite bead in series with the gate drive resistors to moderate that dI/dt, or would that cause undesirable effects? I suppose with too much gate inductance/impedance the MOSFET will spend more time in the ohmic region, but I wonder if there is a "sweet spot".
Why zener with R2 not signal diode ?
This iz not a Zener. This is a symbol of a Scottky diode.
@@sambenyaakov Thanks professor
👍🙏💖
😊🙏
Ich suche den perfekten mossfet Treiber. Für den irf 260n ca 100 k..hrz
Dear Prof the simulation at 8.42 is not giving the results as you have shown .Could you please confirm the correctness of Later MOSFET part of the cirucuit that was added onthe first simulation u have shown
Can you send me your simulation asc file and I will try to compare?
@@sambenyaakov Thanx a lot for the reply . Please find the file here drive.google.com/drive/folders/1w-YcKCiwDQ6JvGXpcbqH7Q59wAh1tVaa?usp=sharing
@@sambenyaakov dear professor could you see the simulation file
@@5minutething519 just noticed it. I will have a look as soon as I can
@@5minutething519 Can you please explain the question in more details? please use sby@bgu.ac.il
Thank you very much for you video.
I have one question here; in many datasheet of drivers, they use also the Push pull with Mosfet shown here (www.analog.com/media/en/technical-documentation/data-sheets/adum4146.pdf) page 3; sorry can not paste here the picture; they use the one Mosfe of high side push pull; but two Mosfets in the low side; The drive signals of the two low side Mosfets are different. Do you know why the use like this ? thank you sir
One is a soft turn off and one a Miller clamp
Thank you ave you done the presentation how the two Mosfet in parallel works ?