Density of Electrons in Conduction Band | Intrinsic Semiconductor | Selvaraj Sankar | Tamil

Classification of Semiconductors:
• Classification of Semi...
Charge carrier density, also known as carrier concentration, denotes the number of charge carriers in per volume. In SI units, it is measured in m−3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material. Charge carrier densities involve equations concerning the electrical conductivity and related phenomena like the thermal conductivity.
The thermal excitation of a carrier from the valence band to the conduction band creates free carriers in both bands. The concentration of these carriers is called the intrinsic carrier concentration, denoted by ni. Semiconductor material which has not had impurities added to it in order to change the carrier concentrations is called intrinsic material. The intrinsic carrier concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material. This number of carriers depends on the band gap of the material and on the temperature of the material. A large band gap will make it more difficult for a carrier to be thermally excited across the band gap, and therefore the intrinsic carrier concentration is lower in higher band gap materials. Alternatively, increasing the temperature makes it more likely that an electron will be excited into the conduction band, which will increase the intrinsic carrier concentration.
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