@@aslammollah6083 Let me try to explain, the value of Vce changes with change in ib and ic. Let say if ib=.5mA and ic = 10mA, Vce(sat) = 90mv to 250mV. Ib= 5mA and ic = 100mA, Vce sat = 200mv to 600mV. With above you can easily the variation in Vce with change in ib and ic. Above is all about the bjt saturation behaviour. In linear region Vcc/Rc = ic and Vc = Vcc-Ic*Rc. I am not sure if I answered your questions. So ic is nothing related go ic sat .
If Transistor is in Saturation. And if i increase the Current in base will the base of the transistor will not get destroyed ?? Example: If my transistor reaches Saturation. At that time i am applying base current of 100mA but further i increases my base current to 1 amp but maximum base current which transistor can handle is 500mA. At this moment will transistor get destroyed, or work fine and if it works fine will it heatup or not ??
Hello Vivek, Thanks for asking good question. If you apply more base current in the base of transistor surely it will get damaged. e.g. Transistor BC547 has maximum base current 5mA anything beyond 5mA will destroy the transistor since BJT is current controlled device. I am not sure where did you get such high base current value like 100mA, 500mA, 1A.
Thankyou for sharing numerical solution , it helped me alot with revision process and achieve personal goals.
Thank you very much for vising the channel. Glad it help you.
sir,
Now if you want to determine Vc, which Ic should I take, Ic or Ic(sat)
Icsat is max current that bjt can handle. You can determine Vc based on your collector resistance and current.
Sir,
Current is Ic or Ic(sat)
@@aslammollah6083 Let me try to explain, the value of Vce changes with change in ib and ic. Let say if ib=.5mA and ic = 10mA, Vce(sat) = 90mv to 250mV.
Ib= 5mA and ic = 100mA, Vce sat = 200mv to 600mV.
With above you can easily the variation in Vce with change in ib and ic.
Above is all about the bjt saturation behaviour.
In linear region Vcc/Rc = ic and Vc = Vcc-Ic*Rc.
I am not sure if I answered your questions.
So ic is nothing related go ic sat .
Why is it that when i use beta dc=Ic/Ib i get Ib to be 0.236mA
Hey...in saturation betaDC is no longer Valid.
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thank you , for all full numeric solved
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as the math sets and directs the operations , thanks
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Helped a lot. Thanks😁
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If I don´t have the VBB, how I can find the Ib to calculate VBB?
Ib =Beta*Ib
but you always have Vbb. If you see any BJT biasing , you will Vbb.
If Transistor is in Saturation. And if i increase the Current in base will the base of the transistor will not get destroyed ??
Example: If my transistor reaches Saturation. At that time i am applying base current of 100mA but further i increases my base current to 1 amp but maximum base current which transistor can handle is 500mA. At this moment will transistor get destroyed, or work fine and if it works fine will it heatup or not ??
Hello Vivek,
Thanks for asking good question.
If you apply more base current in the base of transistor surely it will get damaged.
e.g. Transistor BC547 has maximum base current 5mA anything beyond 5mA will destroy the transistor since BJT is current controlled device.
I am not sure where did you get such high base current value like 100mA, 500mA, 1A.
Pls make a video on PNP transistor
Do you need simulation or theory explanation ?
@@ElectronicsCircuitHubECH theory ecplanation
@@kuldeeprawat4758 Sure i will make video on the same considering one numerical problem.
Thank you.
Most welcome.
Keep supporting.
sir
If ic ≈ie and α ≈1 ，which is region by BJT?
That's when beta is a high factor.
thanks guys
Very Very thx
Most welcome