BJT: Common Emitter Configuration (Input and Output Characteristics) Explained
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- เผยแพร่เมื่อ 14 มิ.ย. 2024
- In this video, the common emitter configuration of the BJT (input and output characteristics) has been explained briefly.
By watching this video, you will learn the following topics:
0:00 Introduction
0:23 Introduction to Common Emitter Configuration
2:19 Input Characteristics of the Common Emitter Configuration
4:12 Output Characteristics of the Common Emitter Configuration
(Different Regions of operation, leakage current in CE configuration)
11:10 Properties of Common Emitter Configuration
Common Emitter (CE) Configuration of BJT
The Common Emitter (CE) configuration is the most frequently used BJT configuration, particularly when the BJT is used as an amplifier.
The following are the basic properties of the common-emitter configuration:
1) Moderate Current Gain
2) Moderate Voltage Gain
3) High Power Gain
4) Moderate Input Impedance (few kilo-ohms)
5) Moderate Output Impedance (Typically 50 - 100 kilo-ohm)
In this video, the input and the output characteristics of the common-emitter configuration is also explained in detail.
This video will be helpful to everyone in understanding the common emitter configuration of the BJT.
#CEConfiguration
#CommonEmitterConfiguration
#BJT
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The timestamps for the different topics covered in the video:
0:23 Introduction to Common Emitter Configuration
2:19 Input Characteristics of the Common Emitter Configuration
4:12 Output Characteristics of the Common Emitter Configuration
(Different Regions of operation, leakage current in CE configuration)
11:10 Properties of Common Emitter Configuration
Sir please cover this topic asap..need your videos soon
and your explaination is amazing Sir
Yes, I will cover this series as soon as I can.
Sir ap bahut "due to that" bolte h please stop repeating this phrase....it is so irritating... N plz make video in hindi it will b better for u n us both
Concept clear 🔥
I need notes all this pdf
I didn't understand these concepts while my JEE, but in my b.tech 1st year, you made me understand this chapter very well.
Thank You so much.👌👌😊😊
i can understand u 😁😁
I still didn't understand
You're literally a life saver bro! I didn't understand any of this!! But after watching your videos!! I understood everything so perfectly!! Thank youu! Keep up the good work! 🎉
Thank you for your efforts , this videos are really helping me too study electronics
Because of Only ur videos i topped my exam with 13 out of 15 ....tq very much sir...ur explanation make nill student into bright student...videos are very easy to understand really tq very much sir....keep going like this and do more videos @ALL ABOUT ELECTRONICS🎉🎉🎉
You just made electronics easy for me. I had a lot of problems understanding the basic things.
Thank You Sir,
For all your efforts. You Really made electronics easy for me!
this channel deserves more subscribers. thanks for the clear explanation
not everyone in the world studies common emitter configuration
@@roshansphotography4140 bwahahahahahahahaahhahahahahahahahaha
Thanks for the explanation!
excellent tutorials! thank you kindly
Lol. Welcome - kindly.
My favorite ee tutorials. Thanks man
Thank you so much Sir !
Tq bro for such a clear cut explanation
Nice explanation 👍,
It will be more helpful if you provide the notes in the description.
the only part of the video i enjoy is the intro music
True... 😂😂
too boring explanation
@@atharva6738 nah bro. U r lazy. That's the reason u got bored.
@@atharva6738 thats mean u r too much dumb
@@atharva6738It's good explanation. Simplistic yet detailed. I would be grateful and try to focus instead of complaining.
Sir please explain slowly ,I need some time toa understand ,and explain more breifly that input impedances are low and high
Thanks you very much sir very easy and smooth explanation to the very tough concept 😊😊
Awesome lecture 🙏🙏🙏
Super now only i understood this concept keep doinG
u r great thanks you so much.............. if u keep ur talk slow and more precise rather than of more lenght....u can be a very good explainer for college student having problem in their topic.... keep it up... time is coming
You are a. Great teacher
really wonderful explaination
This is extremely good!
Excellent 👌🏻
thanks a lot for these videos
Wow superrr.i got it clear now
Where can i find datasheet of VA characteristics for base - emiter junction?
sir, should beta be referred as amplification factor as said in the first video or current gain of CE configuration?
In the introductory video, it was referred as the amplification factor in general term. Because it amplfies the base current. But refer it as the current gain for CE configuration.
In the upcoming videos, will discuss the expression of amplication factor ( voltage gain)of each configuration when they are used for the amplification of AC signal.
really very good.
Sir why do we use the eq of a common base config to find the collector leakage current for common emitter config at cut off region
ya same doubt..anyone?
Thank you so much
Sir, pls make a video on BJT IN CE mode I-V characteristics experiment
Your learning method is very good. But please speak slowly. Love from Bangladesh🇧🇩🇧🇩
Yes, I have noted that suggestion and tried to speak little slowly in the recent videos. But in case, if you find it little fast then please watch the video at 0.75x speed. You can change the speed in the video settings. I hope, it will help you.
@@ALLABOUTELECTRONICS Thanks a lot. Best of luck. Go ahead🥰🇧🇩.
really nice lecture
Thankyou sir...
Sir please tell me what is Vbe ,Vee and Vi are these batteries really connected in the circuit.tell about Vbe is this voltage drop or a battery connected for biasing?
9:36 is alpha the factor of amplification same as beta. and what is the meaning .." close to unity.." range between 0,95 - 0,99 ?
Sir how reverse bias is done in this.as connection is confusing vcc 's positive is connected to collector but negative terminal is not connected to p
I am Confused about transistor amplified output, I THOUGHT THAT EMITTER IS THE OUTPUT AMPLIFIED SIGNAL BECAUSE THE EMITTER IS THE SUM OF COLLECTOR - BASE VOLTAGE AND CURRENT.
PLEASE HELP ME UNDERSTAND SIR..
Thanks...
Common emmiter circuit ...but do we still use methods of common base junctions like pnp or npn...
Tysm❤
hey...it is awesome man...
Very nice 👍👍👍
I love this channel so much
thank you
It would be great though if you could try speaking clearer a bit. sometimes the words get mixed together and sound not so clear
Much Love
It's not clear to me how current going into Base got decreased when Voltage between Base and Emitter is increased.
This had puzzled me too! Here's the explanation.
During the forward active mode, i.e, B-E in forward bias and B-C junction in reverse biased state, the width of space charge region in B-C increases. This also means that there is a stronger electric field in the space charge region. This consequently reduces the width of the base region. Due to this there is a huge concentration gradient in the base region. Now, when electrons are injected into the base region from the emitter region, diffusion process takes over and the electrons travel towards the B-C junction. When it reaches the B-C junction, the strong electric field sways it across the junction and most of the electrons gets 'collected' by the collector side. The small current in the base region is due to the recombination taking place there. Hence when VBE is increased, more electrons gets injected to base and more electrons are collected by collector side increasing IC.
You might need a visual representation to understand the E-field effects well :)
Hi do you have videos were you explain PNP bjt circuits with negative VCC?
I have covered few examples on my second channel.
Here is the link of the playlist:
th-cam.com/play/PLH9R5x7JVXCFyPB1oN2oYSqXZv0_2A_AS.html
10:22 , which is the leakage current & Reverse saturation current from the Icbo & Iceo? plz clear this.
Sir, please can u do videos on working of Amplifiers in different configurations and under different biasing conditions (like voltage divider bias)?
Yes, I will make it very soon.
While plotting the output characteristics of a CE configuration, the graph between VCE and IC, it shows that when VCE=0,IC=0 My doubt is from the circuit, VCE=VCC-ICRC . So when VCE=0, it should be like IC=VCC/RC.Please correct me.
Thanks sir
Vv thx for this nice video
I think the output sine wave at 1:34 must be reversed.
What do you mean by VBBand Vcc in the circuit daigram.. Please sr??
......inorder to reverse biase the collector - base junction Vbb
Bro clear gaa artam kaledhu explain matram super gaa cheppav nice visuals but saturation region cut off region and active region topics chala confusion gaa vundi bro
Sir please make also for other electronics like mosfet jfet led lcd etc.
I have already made videos on them.
If you go to the playlist page, you will find the dedicated playlist on JFET and MOSFET.
And there is a seperate video on LED too.
Sir can you please provide these slides to me...
All three configurations...
How did you study all of it?
Very Nice explanation of topics And I have a problem. What is Vcc Vee and Vbb.
They are the supply voltages connected to base, emitter and collector terminal.
Please also make on FET 👍
I have already made a series of videos on it. Please go through the playlist on the channel.
I have also provided the link for the same in one of the card above the video.
@@ALLABOUTELECTRONICS ok sir thank you so much
5:44 how could reverse bias increase current while the depletion region is wide and no recombination at vcb jn how did IC is increasing
sir, for input characteristic Vce increase, Vcb will also increase thereby Ib decrease. then y at output characteristic (active region) Vce increase ,Ib increase?!!
Its due to early effect. I have already made a seperate video on it. Please go through that video. You will get it.
Here is the link : th-cam.com/video/BOk501WULQs/w-d-xo.html
1:04
collector emitter is reversed bias?
🎯 Key Takeaways for quick navigation:
00:42 *Common emitter configuration*
02:00 *Input and output characteristics*
04:41 *Active, saturation, cut-off regions*
06:04 *Current gain beta*
07:25 *Cut-off region leakage*
09:30 *Base current zero*
10:55 *Leakage current amplified*
11:51 *Moderate current, voltage gain*
12:18 *Output impedance range*
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Sir can you send notes on transistors, amplifiers andfeedback
Lub you ho gya gg❤️❤️
How cb junction will be forward biased if Vce>0v
Sir I'm preparing for iit jam.is this course sufficient for exam????
By the way love u sir .u r just ausome ❤️
Sir os output taken along collector and ground or collector and emitter???
Thanks
The AC output is measured across the collector and emitter. But in this case, since emitter is grounded, so we can say that the output is between the collector and the ground. But if there is a feedback resistor at the emitter (un -bypassed - without bypass capacitor) then that would not have been the case.
I hope it will clear your doubt.
I couldn't get it from minute 6:45 to 7:10 (how did Vcb exactly get forward biased?)
Vce = Vcb + Vbe
Or Vcb = Vce - Vbe.
Now, as Vce reduces and gets closer to the zero. Vcb = - Vbe ≈ - 0.7V
Here I am talking about the NPN transistor, where the collector is n-type and the base is p-type. That means the collector-base junction will get forward biased. I hope it will clear your doubt.
c and b are not biased together as the input biasing is between e-b and the output is between c-e, if we consider that Vce =0 then doesn't it mean it's cutoff case?!
When Vce is zero, then it will be in saturation. In cut-off, both base-emitter and collector-base junction are reverse biased.
Thank you ❤️
Sir i have a doubt that the vin is alternate voltage so when it is between 0 to 0.7V it acts as off switch so how would it amplify the input voltage
Well, that is why the biasing voltage is applied. The input AC signal is on top of this biasing voltage. The biasing voltage ensures that the transistor is operating in the active region, or at least that is how it should be biased while using it as an amplifier.
For more info, please check this video on transistor biasing.
th-cam.com/video/5T84Jzcgj7M/w-d-xo.html
Thanks for such a quick reply 😊 got it.
Amazing video sir. Can we use your slides to teach students?
yes 💗
Sir I have a confusion,how the collector -base junction is reverse biased plz explain
Vcc is usually more than Vbb. So typically, the transistor is biased in a such a way that, Vc (the voltage at collector) is more than Vb (voltage at base ). If Vc > Vb then for NPN transistor, the collector base junction will get reverse biased. I hope, it will clear your doubt.
As collecter current is large then in applications gain current must be large na but why it is moderate
At 5:40 i don't understand that increase in the depletion region increases the electron movement from Emitter to Collector? Can someone help me here pls..
Since depletion region width increases, the effective base width reduces. And hence, the probability of recombination of electron in the base region will reduce. So, now more electrons will be able to cross the base region and able to reach the collector region.
I hope it will clear your doubt.
@@ALLABOUTELECTRONICS In Common base connection,increasing V(cB) increases the input current.If we apply same logic then for CB the input current should reduce.What's the point?
Saturation. Region..?? How collector get forward baise ?
For NPN transistor if Vcc is very low then Vb > Vc so CB junction will be forward biased.
sir in common base in ic vs vcb graph ic is constant but in common emitter ic vs vce is not constant in active region.
It is because of the early effect.
Do check out this video, you will get it.
th-cam.com/video/BOk501WULQs/w-d-xo.htmlsi=EcMAreDF4O6NBNMs
@@ALLABOUTELECTRONICS Actually the correct reason is to keep as vce increases ib decreases to keep ib constant we will inject electrons from emitter or simply we will increase ie.
I want the explanations in written notes .please provide it sir.
Sir please provide notes for us in description
Sir can I explain transistor as an amplifier and transistor equation
I have already made videos on it. Just go through the playlist on BJT, you will get it.
can we apply AC source between Vbb and Rb ? so we can check that this circuit can work as a amplifier or not
Yes, if it is biased properly, then if you apply the small ac signal between the base and the emitter terminal then you should get the amplified output between the collector and emitter terminals.
Sir why the value of VBE is fixed in the relation VCE= VCB + VBE
Typically, for DC analysis, it has been assumed that VBE remains fixed. But it does change with the collector current. I have explained it in detail in the large signal model of the BJT.
But for DC analysis perspective it can be assumed relatively constant for the given transistor.
I couldn't Understand one thing as you said VCE is inversely Proportional to IB AND VCE is proportional to IC so For a smallest value of IB cant we say That depletion layer will be maximum then Ic Should be maximum for values like 1 micro ampere or 2 micro ampere but graph is saying something different
I like the presentation but the words the appears Infront of the screen obstruct the view of the diagrams. U can minimize them so we can actually see the diagrams. Thanks.
You can turn off the subtitles (CC) manually in the video settings.
Common Emitter also has inverted output.
👍🏻
RLC circuit pe vedio
MTI
AC DC moter generator
Sir at 1:03sec u told reverse bias is between collector and base but I think its between collector and emitter
No No, it's a collector-base junction only. The collector is at a higher potential than the base terminal. So, CB junction is reversed biased. If you go through the other videos on the BJT playlist, you will get to know it in detail.
@@ALLABOUTELECTRONICS ok ok thank you
Sir Why Ib increases when Ic increases? Ib should decrease when Ic increases na?
Both are related to each other. Ic = B*Ib. So, if any current changes, the second one also changes accordingly.
At 1:24 which is greater Vce or Vbe
Vce. Because emitter is at ground potential. That means Vb is at 0.7V approximately.
And for the collector-base junction to be reversed biased, the collector voltage has to be more than the base voltage.
I hope it will clear your doubt.
@@ALLABOUTELECTRONICS what if I take Vce=0.5 V Explain the current then
What is the difference between beta DC and beta AC ?
Beta DC is the ratio of dc collector current to base current. While beta AC is for Ac currents. On top of the dc biasing, it the ratio of change in collector current (AC collector current) to the change in base current.
1:06 .....reverse bias
but connected forward bias
If you closely observe, the voltage is applied between the collector and the emitter. With collector more positive than emitter terminal.
But it will not forward biased the collector-base junction. If the voltage at the collector is more than the base voltage, then the collector-base junction is reverse biased.
What will happen if we reverse the battery.. Meaning negative side to collector and positive to emitter? Will it be forward biased? And go in saturation?
11:36 whats the meaning, provides High Power Gain.
It provides both voltage gain and current gain.
@@ALLABOUTELECTRONICS thank you.
how can i download pdf of BJTs
All the PDFs for the BJT are bot available. But if you want it then it will be provided to you soon.
hello sir
can you share your ppt .please its request
and due to that...
Very good 👌👍
Very good Excellent
Sir 7:02 Vce will becomes forward bias or Vcb?
Its collector-base junction. In saturation, for NPN transistor both base-emitter and base-collector junction gets forward biased. I hope, it will clear your doubt.
what is vbb
It is biasing voltage applied at the base terminal.