just one question. the arrow of the MOSFET is to the right, its mean its PMOS right, according to cheat sheet from Dr.Zahi haddad, its written PMOS assume saturation condition Vds < Vgs - Vt , then why he's using NMOS condition assume saturation ? who can answer this
I know it's been 3 years but I'm commenting just in case The 1st equation applies for Triode/Ohmic region The 2nd equation applies for Saturation region
The first example: Isn't that the symbol of a P-MOS transistor? I mean the direction of the arrow pionts outside. So why should we solve the problem based on N-MOS operating condition?
Why is + vgs +1,2kId - 5 = 0 and not vgs -1,2kId - 5= 0? If you can explain I would be grateful. Do you have any class that explains this? if you can send the link
Answer pls Assuming a linear fall of voltage in a transistor at turn on, falling from V to zero in actime t2 , derive an expression for the snubber inductance L which will delay the rise of current to its on state value of I in a time of t1. Derive expressions for the switching energy loss and the inductor energy , in terms of V,I,t1 and t2 and show that the overall loss will be a minimum when t1=(2/3)t2
First he multiplied 0.4 with the () inside. On the left side it was 1 Id. So when he multiply 0.4 times -7.2 you get -2.88 Id. After that he took that 1 Id and move it to the right side which makes left side 0 and right side -2.88 - 1 which makes -3.88 Id. He solved two steps in one but if you first multiply 0.4 with () and then move Id from left to right you will get the same answer as his. Hope it makes sense to you.
You have made 1 mistake in the question Vgs < Vth as this is a p-mos so the current was actually the first current but the answer is still correct. Id = 5.63 mA
Tomorrow my exam pls help a power mosfet with a breakdown rating BVDSS =800V MUST COnduct 10 A when on with a maximum on state voltage VDs =4v if the current density in the mosfet limit to 200A/cm2, estimate the conducting area which is required
The audio in this video is in the cutoff mode
xd
lol
Lmao
bruh
1 year later, still an epic RIP
One and only person to show students on how to solve the equation. Thank You So Much, helpde so much for exam preparation.
thank you for this... beautiful... clear voice without crazy accent, beautiful penmanship, clear explanation... 100/100 ;-)
Thank you very much. My teacher has no wiling to teach concepts he is just reading slides. Thanks to your videos, I can be able to complete my course.
Same 😟😰
same :(
yep
everyone have the same teacher? lol
damn are we from the same school 😂
@@artichilli which school are you from, I am from Istanbul Technical University
Thank you; The examples you do bring all concepts together again and help with review
I have a question for 16:38
Shouldn't the battery you design at that moment be upside down?
You just saved my semester. Thank you ,
Thank you Sir. You helped me understand how to solve a MOSFET.
You are a gentle explainer.
wallah king
Dude has some fancy gadgets🤯
hello, could you please provide us with the table you use for conditions?
so far this the BEST lecture i've come across online.. love from india❤❤ thanks a lot sir!!
just one question. the arrow of the MOSFET is to the right, its mean its PMOS right, according to cheat sheet from Dr.Zahi haddad, its written PMOS assume saturation condition Vds < Vgs - Vt , then why he's using NMOS condition assume saturation ?
who can answer this
no the circuit is in NMOS condition
id = 0,5K(vgs-vth)^2 why do you use id = K(vgs-vth)^2 whitout the 0,5?
I know it's been 3 years but I'm commenting just in case
The 1st equation applies for Triode/Ohmic region
The 2nd equation applies for Saturation region
Isn't the formula for Id should be Id=Kn/2[Vgs-Vth]^2? For saturation region
Exactly!
@Kenneth Presto I was gonna say the same thing
This is E MOSFET, if you check FE handbook you will see Id=K[Vgs-Vth]^2
How do you find this K value?
Please tell me, can the cheat-sheet be accessed in some way? Thank you.
The first example: Isn't that the symbol of a P-MOS transistor? I mean the direction of the arrow pionts outside. So why should we solve the problem based on N-MOS operating condition?
Why is + vgs +1,2kId - 5 = 0 and not vgs -1,2kId - 5= 0? If you can explain I would be grateful. Do you have any class that explains this? if you can send the link
Thanks, your way of teaching is very good
you have solve that assuming the mosfet is n channel but in your paper the arrow says that is the p channel
Isn't the formula for saturation: Id = K/2(Vgs - Vth)^2 ?????
he uses that
hai sir i just want to double confirm u get Id in mA and why did u just calculate the Vgs=5-1.2Id with including mA in the equation
Thank you sir it was so helpful.
Thanks it is very helpful for me
Keep it up
Zahi Haddad shines as usual!
What if vt is not given please tell how can i solve that?
Very Beautiful Explanation Sir. Thank You So Very Much Sir.
there is red liquid flowing out of my ears, is this because of the beauty of this video?
why 1.2k id? shouldnt it be 1.2k is? why id?
thanks
Because he was doing KVL. All the voltages added together would be zero. 1.2 Id is the voltage across that resistor.
Dont stop dis video sir
No, it's coming through but it's distorted. Saturation mode. ;)
Answer pls
Assuming a linear fall of voltage in a transistor at turn on, falling from V to zero in actime t2 , derive an expression for the snubber inductance L which will delay the rise of current to its on state value of I in a time of t1. Derive expressions for the switching energy loss and the inductor energy , in terms of V,I,t1 and t2 and show that the overall loss will be a minimum when t1=(2/3)t2
Lol, the rudeness of some people
thanks so much 👍
Excuse me sir it's supposedly 1200Id, I'm confused now
why did he make the id on the left side 0?
First he multiplied 0.4 with the () inside. On the left side it was 1 Id. So when he multiply 0.4 times -7.2 you get -2.88 Id. After that he took that 1 Id and move it to the right side which makes left side 0 and right side -2.88 - 1 which makes -3.88 Id.
He solved two steps in one but if you first multiply 0.4 with () and then move Id from left to right you will get the same answer as his. Hope it makes sense to you.
great video, thank you
very good
Why we use R in the drain
I think is a pull up resistor.
Thanks
I think the drop in the voltage should be - ??!
Make more video in electronic
You have made 1 mistake in the question
Vgs < Vth as this is a p-mos so the current was actually the first current but the answer is still correct. Id = 5.63 mA
I did not know MOSFETs when the base terminal not used the arrow will change the opposite now I know.
@@noobstracker4029 wut??
Thank you Sir
Thank you
Thankyou...
THANK YOUU
why can’t my professors teach like this
👍👍👍❤️
thank you
maybe u can solve mosfets, but u cant solve your audio clipping....
Good video, but all those calculator things was wasted time.
Tomorrow my exam pls help
a power mosfet with a breakdown rating BVDSS =800V MUST COnduct 10 A when on with a maximum on state voltage VDs =4v if the current density in the mosfet limit to 200A/cm2, estimate the conducting area which is required
It is horrible how you mess with Units.... if I_D is in mA, then keep R in kOhm... also, Ohm is the unit of Resistance, not k.
Distorted audio spoils this video
better than nothing 🤷
You need a capacitor to filter the noise.
@@diy-projects This video is a treasure.