A GaN MOSFET???? MOSFET is an acyrnomn for Metal Oxide Semiconductor Field Effect Transistor. A GaN MOSFET does not exist the GaN devices you are referring to are HEMT devices (High Electron Mobility Transistor). You are right calling the Si and SiC devices MOSFETs but not the GaN. It would be accurate calling them all FETs
You are discussing very important issues that directly relate to renewable energy and reducing our global carbon footprint, keep up the good work! I am interested in efficient grid tied energy storage and thus efficient power conversion for wind turbine and solar PVs. Choosing GaN vs. SiC is a critical design decision.
At 12:28 it should be 35 mΩ for the GaN HEMET, otherwise the power loss is correct. I like those simple comparisons, however It looks to me, that this comparison is not completely fair, since there are FETs in the same package that can beat GaN in a handful comparisons for the same price point. Also the GaN model used here is alomost twice the price of the Si model. But otherwise good job.
Where to order the Nexperia MOSFET and GaN FET handbook? Here’s the link: efficiencywins.nexperia.com/efficient-products/nexperia-design-engineers-guides.html
Thanks & do you have a Patron? (Grey old design engineer in the UK who has become tired of continually explaining how X7R is generally a poor dielectric [E/D hysteresis 😉] but very much appreciates your efforts)
I would love if you made again your videos about a constant current source, but this time using mosfets instead of bjts. I think it would be pretty interesting!
@@FoolishEngineer hello please tell me if there is any analogs for these mosfets used in bldc for scooter - NCEP033N85 ? URGENTLY NEED THEM . thank you all
@@jpjay1584 Evolution; even in a philosophical sense, is not just a sequence of events. There has to be a causal link between each successive event for it to be evolution.
It's a good topic, unfortunately this video has lot of misinformation. First he didn't chose a good SiC device. In fact, this first gen Infineon is a bad example of SiC technology when other companies are already in their 3rd gen... the truth is that SiC is a better material than GAN for many applications, for example high voltage (3kV SiC are available but GAN stops at 1200V). SiC has higher working temperature and better heat dissipation. GAN has also a huge flaw with the material degradation that is a real issue for long term reliability. Finally, even more important than GAN vs SiC is the etching topology. Planar and Trench give very different results
You picked 3 devices Si, SiC, GaN. The devices may or may not represent the best example of each type. This makes no sense!!!! You may be correct, but you did not prove it. This is called reasoning from the "particular to the general". In order for you reasoning to be valid you MUST search out the best devices in each category and compare, and then of course you must compare performance v. cost.
As soon as you held up the book on the topic I decided to subscribe. I love when people reference books or papers. Have a great one!
Awesome! Thank you!
Great video.
A GaN MOSFET????
MOSFET is an acyrnomn for Metal Oxide Semiconductor Field Effect Transistor.
A GaN MOSFET does not exist the GaN devices you are referring to are HEMT devices (High Electron Mobility Transistor).
You are right calling the Si and SiC devices MOSFETs but not the GaN.
It would be accurate calling them all FETs
Thank you, this is what I was looking for. I was trying to fing GaN vs SiC.
MOSFETs have Positive Temp. Coefficient not Negative. This is the reason why thermal runaway is avoided.
All of your videos are so helpful! Thank you!!!
You're so welcome!
12:28 I believe a mistake in the GaN Rds
Great video by the way.
Your videos are very helpful and to the point. and I love the Naruto in the background for moral support
your videos are very neatly presented and excellent, thanks a lot. 👌
So nice of you
You are discussing very important issues that directly relate to renewable energy and reducing our global carbon footprint, keep up the good work! I am interested in efficient grid tied energy storage and thus efficient power conversion for wind turbine and solar PVs. Choosing GaN vs. SiC is a critical design decision.
شكرا لك Thank you, you are benefiting the world and my respect to you
You are very welcome
How do you get the direct formula for Conduction loss, say 20 x 20 x 0.074??
it's basically I^2*R
Please check the conduction loss of the GaN MOSFET is wrong (due to mentioned wrong RDS on for calculation)..
At 12:28 it should be 35 mΩ for the GaN HEMET, otherwise the power loss is correct.
I like those simple comparisons, however It looks to me, that this comparison is not completely fair, since there are FETs in the same package that can beat GaN in a handful comparisons for the same price point. Also the GaN model used here is alomost twice the price of the Si model. But otherwise good job.
감사합니다 설명 잘하시네
your english very good, loud & clear. nice education content bro, ypur subscribe from indonesian
I appreciate that!
How can I get a hardcopy of Nexperia's MOSFET book?
Where to order the Nexperia MOSFET and GaN FET handbook? Here’s the link: efficiencywins.nexperia.com/efficient-products/nexperia-design-engineers-guides.html
@@FoolishEngineer Thank you!!!
Thanks & do you have a Patron?
(Grey old design engineer in the UK who has become tired of continually explaining how X7R is generally a poor dielectric [E/D hysteresis 😉] but very much appreciates your efforts)
Thank you so much or your super thanks!! No I don’t have Patron
I would love if you made again your videos about a constant current source, but this time using mosfets instead of bjts. I think it would be pretty interesting!
Will do!
@@FoolishEngineer hello please tell me if there is any analogs for these mosfets used in bldc for scooter - NCEP033N85 ? URGENTLY NEED THEM . thank you all
@@reptiloidx8942 What about this one? BSC030N10NS5SCATMA1
Thank you and good luck to you...❤️❤️❤️👬👍👬❤️❤️❤️
Thank you too
can you suggest Jelly beans Gan mosfet?
Good work
9:14 🤣🤣🤣 and that how Mosfet exploded with high frequency 🤣 ( by the way ...from what movie he's from? )
LED lighting, did not "Evolve" from incandescent tungsten lamp technology.
no but after.
@@jpjay1584 Evolution; even in a philosophical sense, is not just a sequence of events. There has to be a causal link between each successive event for it to be evolution.
굿 👍
Thanks Brother
No problem
Coustomer - mere inverter me kya fault tha?
Technician - iska GaN fat gaya tha
😂😂😂
💪💪💪💪👍👍👍👍!!!
It's a good topic, unfortunately this video has lot of misinformation. First he didn't chose a good SiC device. In fact, this first gen Infineon is a bad example of SiC technology when other companies are already in their 3rd gen... the truth is that SiC is a better material than GAN for many applications, for example high voltage (3kV SiC are available but GAN stops at 1200V). SiC has higher working temperature and better heat dissipation. GAN has also a huge flaw with the material degradation that is a real issue for long term reliability. Finally, even more important than GAN vs SiC is the etching topology. Planar and Trench give very different results
ESCARGENCY RESEARCH TEMPUS OMNIUS REVELATHÉ
You picked 3 devices Si, SiC, GaN. The devices may or may not represent the best example of each type. This makes no sense!!!! You may be correct, but you did not prove it. This is called reasoning from the "particular to the general". In order for you reasoning to be valid you MUST search out the best devices in each category and compare, and then of course you must compare performance v. cost.
for example?
They are GaN FETs not GaN MOSFETs
A lot of errors in just a few minutes