PIN Diode & Solar cell are primarily differ in their Construction, Principle of Operation, Time of Response, Efficiency and Application. PIN Diode (Small in Size) can be used as Photodetector & Solarcell (Large in Size) to generate electricity.
Sir, u said, when light falls on pin diode electrons will generate, but where light or photons will fall? On P region or n Region or Intrensic region? Bcz in pin diode light or photons will fall first on p and layer. Can u please elaborate little
If light of sufficient energy falls (or) reaches the Intrinsic region then due to the interaction between photons and atoms (semiconductor) electrons are generated.
@@marepallypradeepkumar5537 so it means, photons falls on pn layer and then it reaches the Intrensic region and then it interacts with atomes present in the intrensic region? And then electrons generates? But first it will fall on pn layer so that time what will happen?
@@behealthybefit681 The probability of electron generation is very low in P&N region. So,to increase the number of electrons an intrinsic layer is inserted between P & N regions.
To increase the availability of area in Intrinsic region for capturing light,which generates more number of electrons and holes & this happens only in Reverse bias.
Hello sir, at 5:14, isnt that electric field of the depletion region will head into the p+ side, so the electrons generated by the light will go into n+ side?
Thank you for the video may I ask a few questions? 1. If I understood it correctly, e h pairs are generated by the light, and charge seperation is done by the electric field in the i layer? If that is true if the electric field was low they would be seperated and recombined again?? 2.The key is the light to the intrinsic region the picture look like it hots the p+region only. The core point is light hitting the “big” intrinsic region right? 3. In the formula when you say Ip=qNe is Ne the doping concentraion in n+p+region?? I am not sure what exactly is Ne Thank you for the lecture😲😲
Thanks for your thought provoking questions. I have address them below. 1.Electron & Hole pairs are generated by light, which are seperated by high Electric field only. 2.Light hits the intrinsic region of the PIN diode. Due to the energy transfer between charge carriers and photons, charge carriers are generated or released/emitted out from parent atoms.(if incident photon has energy greater than the band gap energy of semiconductor). This produces photo current(Ip). 3.In formula, The generated Photo Current, Ip=q.Ne q - Electron charge, Ne - Carrier number or concentration.
super explaination sir it is helping for my exms
Thank you.
All the best.
anod is the +ve terminal. cathod is negative terminal , but you have written it opposite and connected the circuit 2:54
PIN Diode should be connected in Reverse bias.
@@marepallypradeepkumar5537 thankyou sir
Dear Pranjal thank you so much for this wonderful video!
Nice explanation keep it up
Thank you.
Top notched
Could you explain the advantages of the PIN diode over the PN diode?
Can I write what u said in sem exams ? If write what u said will they give marks..
Definitely, you can.
cathode is negative terminal right? but you wrote it as positive
Watch it again, I said cathode is *connected* to positive terminal.
I didn't said cathode is a positive terminal.
So the cathode and anode u are mentioned is n , p terminals right??
Exactly
Free electrons not going to n+ side?
As PIN diode is connected in Reverse Bias, electrons will drift towards n+ side only.
Sir I like ur teaching skills vth full clarity
Thank you.
What is the difference btw pin and solar cell then ?
PIN Diode & Solar cell are primarily differ in their Construction, Principle of Operation, Time of Response, Efficiency and Application.
PIN Diode (Small in Size) can be used as Photodetector & Solarcell (Large in Size) to generate electricity.
Sir, u said, when light falls on pin diode electrons will generate, but where light or photons will fall? On P region or n Region or Intrensic region? Bcz in pin diode light or photons will fall first on p and layer. Can u please elaborate little
If light of sufficient energy falls (or) reaches the Intrinsic region then due to the interaction between photons and atoms (semiconductor) electrons are generated.
@@marepallypradeepkumar5537 so it means, photons falls on pn layer and then it reaches the Intrensic region and then it interacts with atomes present in the intrensic region? And then electrons generates? But first it will fall on pn layer so that time what will happen?
@@behealthybefit681 The probability of electron generation is very low in P&N region.
So,to increase the number of electrons an intrinsic layer is inserted between P & N regions.
@@marepallypradeepkumar5537 Thanku sir,
@@behealthybefit681 All the best.
Great lecture thanks!
Have a great learning.
All the best.
IS PIN diode and PIN photo diode both are same ? Are not ?
Yes,both are same.
can you please explain why reverse bias is needed? can you use no bias?
To increase the availability of area in Intrinsic region for capturing light,which generates more number of electrons and holes & this happens only in Reverse bias.
Hello sir, at 5:14, isnt that electric field of the depletion region will head into the p+ side, so the electrons generated by the light will go into n+ side?
As PIN DIODE Connected in Reverse Bias electrons will drifts towards n+ side only.
What is difference between PiN photo diode and Pin photo detector ? Are they both are same ? Sir
Both are same.
PIN Photo detector is fabricated with Diode
Thank you for the video may I ask a few questions?
1. If I understood it correctly, e h pairs are generated by the light, and charge seperation is done by the electric field in the i layer? If that is true if the electric field was low they would be seperated and recombined again??
2.The key is the light to the intrinsic region the picture look like it hots the p+region only. The core point is light hitting the “big” intrinsic region right?
3. In the formula when you say Ip=qNe is Ne the doping concentraion in n+p+region?? I am not sure what exactly is Ne
Thank you for the lecture😲😲
Thanks for your thought provoking questions. I have address them below.
1.Electron & Hole pairs are generated by light, which are seperated by high Electric field only.
2.Light hits the intrinsic region of the PIN diode. Due to the energy transfer between charge carriers and photons, charge carriers are generated or released/emitted out from parent atoms.(if incident photon has energy greater than the band gap energy of semiconductor). This produces photo current(Ip).
3.In formula,
The generated Photo Current, Ip=q.Ne
q - Electron charge,
Ne - Carrier number or concentration.
Bro same Naa name kuda marepally Pradeep Kumar ae 😍
😀
Optical fibre transmitter and receiver
Hello sir could you explain photo diode also
Good explanation
Pradeep sir...
Thank you mahesh sir.☺☺
Thanks sir
All the best
@@marepallypradeepkumar5537 optical amplifier ka bhi video banaye sir
@@dhanukumar2712 th-cam.com/video/5dlYNJWkzTc/w-d-xo.html
thanks 🙏
👍
where is VI characteristic?
NOTES??
Thank you sir!
All the best.
Nice lecture#stemved
Thank you.