ฝัง
- เผยแพร่เมื่อ 15 มี.ค. 2018
- This video will describe the workings of a N channel MOSFET bootstrapped circuit configured as a high side switcher.
High and low side switching circuits will be covered in the video.
Application note:
www.onsemi.com/pub/Collateral... - วิทยาศาสตร์และเทคโนโลยี
Finally someone that explained exactly how a "boot-strapping" circuit works 😍😍
Glad it was helpful!
This is an excellent explanation.
I realy like the way you give context (NMOS Low-side and PMOS High-side) before explaining the problem (RDS is too high with PMOS High-side, but NMOS High-side circuit dont work) to finish with the solution (Cap. + diode bootstrap).
Thank you very much.
really good and simple. thanks!!
This is how tutorials should be presented. Excellent.
Well organized, well presented, clear and concise. Thank you for an excellent tutorial!
You're very welcome! Glad it was helpful.
Very good video, I like your videos a lot.
I recently learned that there are some optocoupler that are driver mosfet. Like the TLP591 - DC Input, Photovoltaic Output. They are not cheap, but the voltage in Gate is independent of the PSU of the load, which makes it immune to voltage drops and other problems.
I whacked the subscription bell soon after you said you use automotive spec in many designs. The automotive industry has ramped up its tech over the decades, and now it allows hobbyist a lesser expensive route to quality and robust electronics where previously there was only expensive aircraft silicon. With the advent of electric vehicles, that has only widened the selection and ubiquity of very interesting electronics. I’m happy the cost bar has lowered!
Thanks, this subject was playing in my head today
Sweet! A use for all those cheap low Rs n-channel mosfets . I used a open collector output comparator to drive the bootstrap. Worked great well up into ultra sonic frequency.
I can't say how grateful I am for this video. Thank you very much!
Your Welcome!
Thank you. For the past hour I couldn't tell how the capacitor and voltage source acted in series until you motioned with your pencil.
Great idea bud. Very simple and probably very functional even in long period cycles if one use good quality, low leakage parts.
Thank you for this turorial. Bootstrap driving of mosfets is now much clearer thanks to you.
Glad it helped!
finally, you make it clean and clearer, appreciate it.
Glad it helped!
Very practical and Very useful circuit idea. Thanks.
Your videos are the best!! Your explanations are very clear and entertaining
Thanks for the feedback!
It is very powerful circuit and cheap. I test it, work like charm!. Thanks you very much. I used boost converter but it is costly and design is not very good for small package. I used it for bicopter, I will upload soon.
Good video. Thanks for this idea.
Awesome video, this is what I was looking for :D
thank you so much, I've been struggling to understand bootstrap and finally you have made me understand it very clearly
Glad it helped!
Congratulations from Brazil.
TNX 4 the upload
73 N8AUM
I like mosfets and i like bootstrapping, now I know how to do both at the same time!
I FINALLY get it now. Thank you for this wonderful explanation.
Glad it was helpful!
Excellent. Thank you!
Thanks for the info...
As I understand it correct, I can use 4 LL N-channel fets for an h-Bridge on 24V. As log as I feed the top ones 29V to switch using Optocouplers or so....
thank you!
this is excellent design! the explanation is better!!
Thanks. I like this idea. I'd love to see more hints like this.
While tearing apart old consumer electronics P-Channel MOSFETs and Power PNP BJTs seem to be extremely rare. In fact the only place I know I will find a P-Channel MOSFET (without ordering anything) is on lithium battery protection PCBs, typically in a SOT-8 package. Even the cheapest Chinese adjustable power supply kits, sold for around $5 use a power NPN BJT.
I'd like to see you explain the different configurations to avoid the use of power P-Ch/PNP devices. It's handy information to have in those situations where I want to build something now and can salvage a part instead of ordering something and waiting a week or more ;)
BTW, if we are switching any power MOSFET with a stable Gate voltage, how easy/accurate is it to use the voltage drop of the Rds resistance in place of a shunt to measure the current? Would I need to measure the Rds resistance value of the actual part used? What's my potential measurement resolution?
-Jake
Upcycle Electronics - As I have experienced MOSFET RDs on data, the problem is not the voltage, it's the extremely low current demand. It's almost like a charge dependant gate. Even static electric effects switch these things. So, in the absence of current, I don't know how to measure voltage. Even on a Tektronix 556, I have trouble sorting it out.
Boonedock Journeyman Rds would be Drain-Source voltage divided by Drain-Source current. Are you talking Gate current ?
Thanks a lot for video! it opened a new window for me.
many many thanks, now i understand whats going on with bootstrapping, theres alot of indepth videos and very dry explanations out there, however yours was very interesting and in the short time perfectly understandable in comparison to the hours in class of trying to understand the subject matter, keep up the good work. Top, thanks once again.
Thanks for the feedback!
ohhhhh... that's why my solenoids were being weird with my optocouplers.. thanks so much for this clear explanation.
Interesting circuit nice refresher for an old timer
You saved my energy
I love you. Ty for saving my presentation in university
Same here!
Quite brilliant.
Great video!! Thank you for uploaded it.
Glad you enjoyed it!
You just earned yourself another subscriber :D Excellent explanation. Thank you :)
Thanks and welcome
Very nice explanation , thank you !
You are welcome!
Best explanation, appreciate
Glad it was helpful! Thanks for the visit.
That was a great video. Thanks !!
You are welcome!
Thank you, best explanation
Glad it was helpful!
thank you for making this video. i see you have few views and thats a shame cause it helped me so much.
keep it up! I wan't MORE!
my first bootstrap configuration ever made was due to you and you're video :)
Thanks for the feedback.
Check out these videos:
th-cam.com/video/zTHzaNdByVA/w-d-xo.html
th-cam.com/video/mjIubJeTRyY/w-d-xo.html
Great vid.
nice, I learnt a lot
great explanation. thank you soo much
You're welcome!
Nice video, thanks.
Thanks a lot man, great video, great explanation
You're welcome!
Excellent. Thank you very much.
You are welcome!
perfectly explained
Thanks so much, great video! ,This mosfet IRF1405 and
Will this circuit you explain work with 24V
Awesome Explanation. 5 stars ★★★★★
Thanks for the feedback.
Excellent👍👏.
Many thanks
Great video!!
Glad you enjoyed it
Thank you. Didn't know about this technique. Can you make a video about different types of mosfets, their main characteristics and circuits?
Check out these videos:
th-cam.com/video/zTHzaNdByVA/w-d-xo.html
th-cam.com/video/mjIubJeTRyY/w-d-xo.html
Brilliant. Explained exactly as you need the information. P channels may be easier but I want to avoid them because of the high SD r. PS. I like the IRF1407. Their "F" but run OK off arduino. Also, I assume its going to work OK for brushless motor? Thanks!
Very very very very very informative 🔥🔥
Glad it was helpful!
If I were to use an n channel depletion type mosfet instead of enhancement, can I turn this circuit from 'normally closed' to 'normally open'?
Also, can I control that npn transistor with a raspberry without killing it? What were to happen If I used an electrolytic cap instead of the cap used in this video?
Thanks! Really handy video.
Thanks so much, great video! Can you recommend a good p-channel mosfet for high side switching, that can be driven by logic, and control 3.3-5 v? Want to interface to arduino.
There are a few out there but I have used the NDP6020P and they are fairly easy to obtain.
www.sparkfun.com/products/12901
7:53 you can increase holding on time by using a 1n400x diode instead of 1n4148. 1n400x has lower leakage. Learned that from Bob Pease. Also use non-electrolytic cap.
Why non electrolytic?
excellent job , this has clearedup an issue I was struggling to accept , have you gone on from this vide to discuss charge pumps which I also need an additional awareness of
Check out this video: th-cam.com/video/wkSrmPBDRys/w-d-xo.html
Thanks a lot.
You're welcome.
Tnks for tutorial,, but if the voltage more than 12volt, example from automotive battery ? Need change mosfet
Excellent
Your circuit simulated successfully in LTSpice also btw
That's good to know ... thanks for the feedback
the diode and cap solution, is that equal to a charge pump circuit? cause u doubled the 12 Volts?
Hello, and thanks for the excellent tutorial. Quick question: I've seen you say multiple times in the comments that this setup is not intended for high-frequency applications, and that one should use an integrated circuit for such a case. What is the advantage of using an IC over switching out components for lower-valued ones that could support a higher frequency?
All MOSFETs have Gate/Source capacitance so switching them on/off very fast is not an easy task. There are ICs that will do this properly and keep the MOSFET out of its ohmic region during switching. This keeps the power dissipation down to a minimum and avoids MOSFET failure. To understand gate/source capacitance better check out these videos: th-cam.com/video/zTHzaNdByVA/w-d-xo.html
th-cam.com/video/mjIubJeTRyY/w-d-xo.html
@@0033mer Thanks for the answer and the resources!
Thank you
You're welcome
thanks, usefull video 👍
Glad it was helpful!
Awesome thanks!
You're welcome.
There are also p-channel MOSFETs with considerably lower Rdson like the IRF4905 with 20 mOhm or even the IXTP140P05T with just 9 mOhm. The p-channel MOSFETs for higher voltages have mainly higher values like the 500 V IXTP10P50P with 1 Ohm.
As time goes on manufacturers are making P-channel MOSFETs with lower RDS on resistance. P-channel MOSFETs have holes as majority carriers as N-channel have electrons so P-channel MOSFETs are slower in switching and have higher input capacitance (Ciss). The main purpose of the video was to show an example of bootstrapping as it is using in many gate driver ICs.
@@0033mer usually the main reason for the use of n-channel high side switches is, that they have comparable characteristics like the n-channel low side switch like gate threshold voltage and transconductance. And they are usually less expensive.
The use of gate driver ICs is mostly their switching current capability and shoot-through protection.
But the industry offers also n-MOS and p-MOS pairs with nearly comparable parameters like irfz24 / irf9z24 or irf540 / irf9540. But it is not recommented to operate them with a 12 V rail to rail switching signal, especially if they have low channel resistances.
Even 100 to 200 mOhm devices can be destroyed by the energy of a 1 µs shoot through coming from a low ESR electrolytic capacitor.
@6:00 I would add a bleeding resistor with value depending on the loading and wiring conditions. On other side we may use a BJT transistor to connect the bleeding resistor to the cap to discharge it once the PWM is tunrned OFF. I was thinking about where else can we insert the bleeding resister! I need to build this circuit and try it for further testing.
The circuit was meant to simply demonstrate how bootstrapping works and is not optimized for speed or PWM applications
Thank you 0033mer!
You're Welcome.
@@0033mer I am testing the bootstrap circuit on LTSpice and does the job very well. Thank you!
Thanks ... good to know.
can u do a similar video but using a dedicated gate driver chip
is there a way to control the high side of a circuit with 2 n channel mosfets controlled with a pin of an arduino
My eyes was messing with me! I was scrolling down, and im like what the heck is Boost trapping! Ha-ha
You don't really need the 1kΩ resistor. And reducing the 10kΩ resistor, in addition, should allow it to switch faster (=less partially on time).
If short transient times are important, a push-pull driver could be used - but that requires 2 more transistors.
Anyway, it's a good basic ciruit and you explained it well.
You are correct. The orginal circuit was built as you described but was modified as shown to be driven with CMOS logic which has limited sink current capabilities. The resistors limit the current from the charge on the gate to source capacitance and from the bootstrap capacitor. The circuit is for demonstration purposes only and if high speed is need a high side gate driver IC should be considered. Thanks for your feedback.
Nice video.
Don't you feel the leakage current via the 10K resistor would be more than the leakage current via the diode?
All semiconductor junctions have some leakage so the diode, mosfet and transistor would all contribute to the total leakage of the finite charge on the capacitor. The blocking diode is common to all bootstrap circuits
so it was mentioned as the leaking source. The other component can differ in different designs. ( the transistor could be replaced with a relay contact) The purpose of the video was to demonstrate how a simple bootstrap circuit functions.
@@0033mer can you please explain this.
When I drive a mosfet(NPN) from the output of a 555timer it turns on for 2 seconds when there is a led connected at the drain of the mosfet, but when I connect a small motor in parallel with the led the time reduces to 800ms.
The LED is clamping the voltage across the motor. Do not connect the LED in parallel with the motor.
I have a question , on the first example with the N channel you had a resistor going to ground (pulling down the gate ). can I put the resistor to vcc instead of ground ? So it would be pulling high unless the signal goes low , and the load would be allways turn on unless the signal turn it off
To drive a 1700V mosfet, I assume the same circuit will work if the components meets the voltage ratings, capacitor, BJT, diode and resistors to say 1500V
Does it invert the signal?
cant pwm be used to keep the capacitor charged?
Can i use Gate drive Transformer instead of GDIc ? What will be the disadvantages ?
I wanna use it for driving Half bridge of Class D Amplifier?
Never understood the concept mosfet bootstrapping. This is something I need to know. A while back I experimented with a three half-H bridge to try to drive a BLDC motor.
At least I know how it's possible to build a high side switch with an N-channel mosfet.
If you can build one of these bootstrap circuits, you can essentially build up a 24v rail and then feed into the gates of your h-bridge with smaller transistors.
@@OtherDalfite _"...you can essentially build up a 24v rail and then feed into the gates..."_
That is an excellent idea. Just today I started researching charge pumps. That's another circuit I want to build. Thanks for he tip.
@@3deeguy I'm thinking of that very concept for something I'm working on at work. Hope it helps!
@@OtherDalfite It'll help.
I'm just a hobbyist but I have to say I do expect to run into a few hurdles. A couple years ago I breadboarded a triple half-H bridge using transistors and never could get it to run smoothly. The hfe of each transistor never matched and add to that trying to get complimentary pnp's and npn's to cooperate with each other.
If there is a charge pump IC I'll order mosfet driver IC's too and try to build the circuit that way.
I know I'm talking a lot but now I'm thinking about ordering parts so I can test it out on my oscilloscope.
@@3deeguy hey, was doing some simulations using this idea as a springboard. Currently the best way I have to do this is get a voltage doubler (a bit less complex than bootstrapping) and make a dedicated rail circuit 10v or so above your Vds. Then use an opto-coupler to send the voltage to the gate of the mosfet you're wanting to control. Opto-coupler can be controlled with a 5v PWM from an Arduino.
If anyone has a better way just let me know. Tried normal npn/pnp transistors but couldn't get a configuration that worked.
How would i add a mosfet driver
Ciss is the input capacitance, gate to source and gate to drain (Ciss=Cgd+Cgs)
Yes .. you are correct. Technically Ciss = Cgs + Cgd and is the "input" capacitance as a whole for the Mosfet.
Ciss is the capacitance between the gate and source terminals with the drain shorted to the source.(Cgd in parallel with Cgs)
During switching the Cgd actually amplifies the Cgs so the Ciss is a spec used to compare different Mosfets input capacitances.
Hi,
Great explanation. Just curious as what are the advantages/disadvantages of this circuit as compared to a dedicated mosfet driver ic?
Lots of good mosfet drivers available. This circuit was built to demonstrate what bootstrapping is. Some mosfet driver ICs have internal bootstrap circuits.
@@0033mer
But the question is, why should I spend on a mosfet driver when I can make it this simply.. What is the advantage of using a mosfet driver compared to this simple Circuit? What are the scenarios in which a mosfet driver will perform better as compared to this circuit?
This circuit has an On/Off drive operation . Watch at 5:35.
A driver chip supports constant drive.
@@0033mer
Thanks for your reply.
Any other drawbacks of this circuit? Such as frequency limitation or so?
It is a low frequency circuit.
Can i replace the diode with npn transistor
I am asking this question because I need my load to get on when the Arduino give High output
Love you video ☺️
Hello
a query from Argentina: according to the data sheet of the irf1405 the Gate-to-Source Voltage is 20volts, how is it that it does not break if you put 24volts in the gate?
very cool video!!!
The 24 volts is applied from the Gate to ground. With 12 volts across the load there will be 12 volts between the Gate to Source. Check out video at 4:33.
I am new. Doesn’t the RDS on .8ohm issue go away after a few ms so we could use a P channel mosfet in continuous mode and avoid the capacitor draining/switch off?
RDS on resistance is the On-state resistance of the Mosfet when it is in saturation as indicated in the data sheet, with the proper Vgs applied. The RDS on resistance value does not go away after switching. It actually increases with temperature over time. For a lower RDS on for a P channel check other part numbers for a lower spec.
@@0033mer thanks for this excellent video and your reply. I'm learning quite a bit from your other videos. I am really interested in high side switching for a project I'm working on. I'm interested in this F5305S based module with 817 opto isolation RDS on .06 ohms vs .8ohms. www.irf.com/product-info/datasheets/data/irf5305s.pdf . The module is shown in this video. th-cam.com/video/eAANkWDvusU/w-d-xo.html . I'm driving a large 300A bi-stable relay with a second pulse . I'm guessing the P channel mosfet have improved since your video. Also I think I need to understand how to measure the issue with RDS on, I'm guessing you may get voltage drop and heat with the higher RDS on?
Yes .. its all about getting the lowest RDS on so power dissipation is low with a lower running temperature. MOSFET technology is always changing so specs are always getting better for P channel MOSFETS. RDS on is the voltage drop across the Drain/Source divided by the Drain current when the MOSFET is fully turned on. Check data sheet for best spec and ensure turn on time is fast so you don't dwell too long in the linear mode region.
Please can 311V be the input to the entire circuit? Plus the bootstrap circuit
If one were to increase the value of the cap will the duty cycle increase for the on state of the Fet?
Yes .. the leak-down time would be longer.
Why does the collector ground at the beginning? And if it is ground, the node after 1n4148 a ground also, isn’t it? Then how the capacitor charges up?
nice thanks
Most welcome
how to use tlp250 as high side mosfet driver
3:11 how this can be done if both mos are n type in Half bridge construction ??
In which upper mosfet ground is floating .
Ooh you did mentioned that later in the video ...
Monitory H carrier of p type
Is the purpose of the 1k resistor on the gate to limit the current flowing off the gate when switching it off? Is this necessary? Or am I completely misunderstanding?
When turning on a Mosfet you have to charge up the gate to source capacitance. During switching, the gate to drain capacitance also comes into play. With these two capacitors and the Miller effect we can have a large Ciss with quite a large charge. To turn off the Mosfet we have to shunt this charge to ground. In my circuit the 2N3904 could probably handle the discharge current but if you were using an open collector TTL gate (say a 7406) it can only sink 30 mA so I included the 1k ohm resistor.
Fair enough, I see I need to study up more on the size of these capacitances. Thank you.
Great Video but It can be Replaced Also by using A Darlington Pair like TIP122 6A Or any other as they can operate in High Frquency also if I m not wrong
No need to bootstrap with a Darlington. It will work but Vsat can be as high as 2 volts so power dissipation is a concern.
Hi again, I want to understand how the bootstrap capacitor works. Kindly tell me about it.
Go to 7:25 in the video.
great explanation. But i have a question why is MOSFET still working when is 24V on the gate, i looked up on datasheet and saw that max. voltage of Vgs is +-20V, why's that ?
The bootstrap circuit generates 24 volts from the gate to Ground. With 12 volts across the load the gate to source voltage (Vgs) will be 12 volts. Check video at 7:20.
@@0033mer hahha oh that's right, my bad, thanks for fast response.
Hello! is it important the frequency that you got in the pwm signal? Because I calculated the RC time constant is 22ms. Does this work well with a high frequency?
This circuit is not meant to run at high frequencies. It is a low parts count circuit to demonstrate mosfet bootstrapping.
@@0033mer and what about if I wanna run it at high frequencies. Should I just change the capacitor value to sth smaller or there's another stuff I should thing about?
For high frequency operation you need to design your circuit around a HVIC.
www.onsemi.cn/pub/Collateral/AN-6076.pdfJP.pdf
It looks like working but i cant measure any voltage at the gate of mosfet
I took my oscilloscope and measure the gate to source voltage and it says 0V but the load gets 2A current and mosfet doesn't heat up much.I'm using it with 100kHz
Very confused 😅
To bring the Mosfet on there is a 10,000 ohm and 1000 ohm in series which is 11,000ohms and that is too high and so too slow, while to switch off there is the 1000 ohm resistor which is also too high.. Really there is no need for two resistors and one will do to replace the 10,000 ohms with a lower one. To increase the turn-on speed I used an additional transistor following the collector of the first transistor as an emitter follower but I pulled its emitter down by connecting a diode between its emitter and the collector of the first existing transitor. Works fine and even a two-transistor push-pull PNP and NPN would do.
The purpose of the circuit was to demonstrate how a bootstrap circuit works and not intended for high speed switching. It was originally designed to be driven with CMOS logic so the resistor values current limited the discharge of the gate capacitance charge.