why when semiconductor is at equilibrium (Jndrift + Jndiff = 0), Fermi Energy is Constant?....or in other words, why when there is no current in the semiconductor Ef is constant with respect to x?...thanks
+jj Suppose if its not constant and changing with respect to x there will we some concentration gradient and due to which again there will be generation of the diffusion current. hence it is constant so as to make conc. gradient=0.
will u explain how conc. gradient is related to fermi level and why fermi level shifts up in n type semiconductor?? acc . to me when we r adding n type impurity then no. of electrons r incresing in VB so now also the probability of finding electron below intrinsic fermi level is 1, so der shoulb b no need to shift it up....
donner energy level is not lies in VB actually it is closer to the CB so at room temperature they have energy to get into cb that's why possibility of finding e increase in cb
Thank you so much ....sir...
Your videos help me a lot. .....
Without your videos I may never pass my this Nano electronics subject...
Jahanpanah! Tussi great ho…❤❤
when we r taking conc gradient zero then why Ei is nt parallel to Ef like simple n type semiconductor ?
Derivation starts at 4:45
is it the first lecture in series ?? From where to start, if I want to understand in detail the band structure, fermi level under different conditions
why when semiconductor is at equilibrium (Jndrift + Jndiff = 0), Fermi Energy is Constant?....or in other words, why when there is no current in the semiconductor Ef is constant with respect to x?...thanks
+jj Suppose if its not constant and changing with respect to x there will we some concentration gradient and due to which again there will be generation of the diffusion current. hence it is constant so as to make conc. gradient=0.
Rahul Vashistha Thank you for your reply
@@rahulvashistha8792 Could you write more detailed explanation?
Why you stopped uploading videos??
AWESOME!
The only explanation of Einstein Relation on my elec eng textbook is: go check ur physics textbook, lol
Shouldnt when Ef- Ei is small the e- concentration is higher?
nope its n=nie^-(Ei-Ef)/kT ,,,soEi-Ef is higher ,higher n,,,SEE THE -VE SIGN
Hi
will u explain how conc. gradient is related to fermi level and why fermi level shifts up in n type semiconductor??
acc . to me when we r adding n type impurity then no. of electrons r incresing in VB so now also the probability of finding electron below intrinsic fermi level is 1, so der shoulb b no need to shift it up....
watch video from lecture 8 you will understand
i've watched d whole series.....
donner energy level is not lies in VB
actually it is closer to the CB so at room temperature they have energy to get into cb that's why possibility of finding e increase in cb
Aare you neso academy sir
Sir can u share pdf notes
+1
電子三乙的+1
樓上該不會是電子傳奇甲洨哥 久仰了
+黃文杰 +詹季燁 兩個一樣的人欸0.0好神奇
Konnichiwa