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Thanks for the video
16:10 SiGe 4.3 kelvin; 17:25 Enduring resilience of Silicon
12:40 comparison of tech III V vs Is etc; 14:11 GaN wattage o/p
CMOS below 90nm uses strain eng principle to enhance mobility; 11:02 600 GHz ...10x improvement
Thanks for the video
16:10 SiGe 4.3 kelvin; 17:25 Enduring resilience of Silicon
12:40 comparison of tech III V vs Is etc; 14:11 GaN wattage o/p
CMOS below 90nm uses strain eng principle to enhance mobility; 11:02 600 GHz ...10x improvement