EC GATE 2014 2M - Carrier Concentration Calculation (Compensated Doping)

[@yusufaksel2516]

Hi, thanks for such nice videos. In this question, I assume you miswrote ni as 10^15 instead of 1.5*10^10. I mean the right bottom part of the page.

[@surajkulal692]

for intrinsic gallium arsenide, the room temperature electrical conductivity is 10-6 (ωm)-1; the electron and hole mobilities are 0.85 and 0.04 m2/vs respectively. compute the intrinsic carrier 2/vs respectively. compute the intrinsic carrier concentration ni at room temperature.

[@surajkulal692]

Sir can you please solve this step by step

[@سعيدحميد-ذ3ذ]

estimate the resistivity of a silicon sample doped with phosphorus to a concentration of 10^15 cm^-3 and boron to concentration of 10^17 cm^-3 the electron mobility and hole mobility are 700 cm^2/VS and 300 cm^2/Vs respectively

[@tejaswinig9968]

Thank you so much sir . Grt efforts .

[@enex731]

Please help to solve - A silicon wafer 1-mm thick having a diameter of 200 mm contains 5.41 mg of boron uniformly distributed in
substitutional sites. Find (a) the boron concentration in atoms/cm3
and, (b) the average distance between boron atoms

[@gopisanaka8438]

sir we should have to take difference of these two dopants concentration not only one ......in the minority carriers calculation

[@navnit444]

Sir ni is 1.5× 10^10 you have mistakenly wrote wrong there
Please send rectified results sir

[@CkNavaneeth]

sir is this question is ask for 5 marks for university exam

[@ScholarStream_25]

Sir is density Same as concentration of free charge carres

[@yigitsubutay]

Why you guys calling each other "Sir" ?

[@diy-projects]

excellent. thank you