Bodo's Power Systems
Bodo's Power Systems
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SiC Session - October 2024
Here is the recording of the Bodo's Power Systems Expert Talk on SiC. We would like to thank our participants:
1. Ehab Tarmoon, Microchip
2. Daniel Makus, Infineon
3. Brandon Becker, Qorvo
มุมมอง: 186

วีดีโอ

GaN Session - October 2024
มุมมอง 973 หลายเดือนก่อน
Here is the recording of the Bodo's Power Systems Expert Talk on GaN. We would like to thank our participants: 1. Alex Lidow, EPC 2. Michael Basler, Fraunhofer IAF 3. Simon Li, GaNPower International
Technology Stage: Panel Discussion SiC Wide Bandgap, "The Future of Power" Part 2
มุมมอง 1645 หลายเดือนก่อน
00:00 Welcome - Bodo Arlt 00:12 Dr. Peter Friedrichs - Infineon 06:22 Guy Moxey - Wolfspeed 13:44 Aly Mashaly - ROHM 19:00 Virgiliu Botan - Hitachi Energy 25:37 Dr. Kevin Speer - Microchip Technology 32:54 Richard Zhang - Alpha & Omega 40:35 Mechele Macauda - STMicroelectronics 46:29 Closing - Bodo Arlt
Technology Stage: Panel Discussion SiC Wide Bandgap, "The Future of Power" Part 1
มุมมอง 1905 หลายเดือนก่อน
00:00 Welcome - Bodo Arlt 00:58 Dr. Evangelos Theodossiu - Vincotech 07:11 Eugen Stumpf - Mitsubishi Electric 13:27 Dr. Mrinal K. Das - onsemi 21:20 Christian Reuter - Fuji Electric 28:10 Pierre Delatte - CISSOID 35:15 Ramanan Natarajan - Qorvo 44:05 Carlos Silva - WeEn Semiconductors 49:50 Stefan Häuser - Semikron Danfoss
Technology Stage: Panel Discussion GaN Wide Bandgap, "The Future of Power"
มุมมอง 1845 หลายเดือนก่อน
00:00 Welcome - Bodo Arlt 00:18 Dr. Thomas Neyer - Infineon 07:02 Alex Lidow - EPC 14:10 Philip Zuk - Transphorm 23:03 Tamara Baksht - VisIC Technologies 31:03 Balu Balakrishnan - Power Integrations 40:20 Llew Vaughan-Edmunds - Navitas 47:25 Dilder Chowdhury - Nexperia 56:33 Harald Parzhuber - Texas Instruments 1:01:56 Giorgia Longobardi - Cambridge GaN Devices 1:11:21 Closing - Bodo Arlt
GaN & SiC Session - January 2024
มุมมอง 23311 หลายเดือนก่อน
We would like to thank our participants: 1. Federico Unnia, EPC 2. Pradeep Kulkarni, Microchip 3. Muzaffer Albayrak, Wolfspeed
Accurate Real-Time Simulation of Converters with Frequent Current Commutation Using Sub-Step Events
มุมมอง 196ปีที่แล้ว
Executing real-time simulations with a fixed time step presents a challenge for the calculation of discrete switching events in power electronic converters. This problem is particularly evident with DC/DC converters such as the Dual-Active Bridge (DAB) or LLC operating with wide-bandgap devices at high switching frequencies where the simulation time step is in the range of the switching period....
Simulating Conducted EM Emissions from Power Electronics
มุมมอง 172ปีที่แล้ว
The modeling of the conducted EM Emissions of a synchronous Buck is demonstrated how to predict the emitted spectrum. The methodology takes the layout implementation of the converter stage into account, based on a commercially available EM extraction tool. This solution benefits from a respective switch model included in the software, offering a fast representation of the switching behavior wit...
The Power of Wide Bandgap Semiconductors
มุมมอง 156ปีที่แล้ว
Wide bandgap semiconductors are found in many different types of power applications and lead the way to a sustainable future. Learn all about the requirements and considerations for precision power analysis of wide bandgap semiconductors and meet one of our Precision Makers during the presentation and live Q&A session. Michael Rietvelt’s presentation on the Test, Measurement & Simulation-Day at...
Faster WBG device characterization for improved time-to-market
มุมมอง 132ปีที่แล้ว
Tektronix Keithley 4200A-SCS high performance parameter analyzer enables to accelerate research, reliability and failure analysis studies of semiconductor devices, materials and process development. Andrea Vinci’s presentation on the Test, Measurement & Simulation-Day at Bodo’s 2022 WBG Event. He is Technical Marketing Manager - EMEA at Tektronix.
Here is the recording of our Live Q&A (L11) from my Wide Bandgap Online Event on the fourth day.
มุมมอง 9ปีที่แล้ว
We would like to thank our participants: 1. Andrea Vinci, Tektronix 2. Michael Rietvelt, Yokogawa
Here is the recording of our Live Q&A (L12) from my Wide Bandgap Online Event on the fourth day.
มุมมอง 4ปีที่แล้ว
We would like to thank our participants: 1. Niklaus Felderer, Plexim 2. Simon Muff, Keysight Technologies
Passive Component Advances for Wide Bandgap Semiconductors
มุมมอง 132ปีที่แล้ว
Active components made of WBG materials exhibit outstanding electrical and physical performance that is well documented and understood. This presentation will cite examples of advances in capacitors that allow WBG active devices to operate in more ideal conditions and fulfill their maximum performance capabilities. Examples of reduced parasitic loss capacitors are shown in RF applications such ...
Advanced Capacitor Technologies
มุมมอง 157ปีที่แล้ว
The use of wide band gap devices like GaN or SiC require new passive components, operated at elevated temperature and higher switching frequencies. SDU conducts research for new capacitor technologies like new polymer Aluminium electrolytic capacitors for voltage over 400 V or new dielectric materials for metallized film capacitors with increased dielectrically constants and a better thermal st...
3D printed liquid cooled heatsinks for power electronics applications
มุมมอง 112ปีที่แล้ว
Christopher Rocneanu’s presentation on the Passives & Magnetics-Day at Bodo’s 2022 WBG Event. He is VP of Business Development at IQ Evolution GmbH.
Gate Driver Auxiliary Supply for SiC-based applications
มุมมอง 362ปีที่แล้ว
Gate Driver Auxiliary Supply for SiC-based applications
E-CAP™: The Next Frontier in Capacitor Technology
มุมมอง 373ปีที่แล้ว
E-CAP™: The Next Frontier in Capacitor Technology
Benefits of .XT interconnection technology for Discrete Power devices
มุมมอง 338ปีที่แล้ว
Benefits of .XT interconnection technology for Discrete Power devices
Magnetics Optimization - The fast and reliable way
มุมมอง 113ปีที่แล้ว
Magnetics Optimization - The fast and reliable way
Passives for Power: Measuring with Large Signal Excitation
มุมมอง 89ปีที่แล้ว
Passives for Power: Measuring with Large Signal Excitation
Efficient, Economical Choices of Magnetic Materials for SiC an GaN designs
มุมมอง 97ปีที่แล้ว
Efficient, Economical Choices of Magnetic Materials for SiC an GaN designs
Here is the recording of our Live Q&A (L8) from my Wide Bandgap Online Event on the third day.
มุมมอง 8ปีที่แล้ว
Here is the recording of our Live Q&A (L8) from my Wide Bandgap Online Event on the third day.
Here is the recording of our Live Q&A (L9) from my Wide Bandgap Online Event on the third day.
มุมมอง 5ปีที่แล้ว
Here is the recording of our Live Q&A (L9) from my Wide Bandgap Online Event on the third day.
Here is the recording of our Live Q&A (L10 from my Wide Bandgap Online Event on the third day.
มุมมอง 3ปีที่แล้ว
Here is the recording of our Live Q&A (L10 from my Wide Bandgap Online Event on the third day.
What is new in Gallium Nitride and Silicon Carbide technologies for power electronics?
มุมมอง 349ปีที่แล้ว
What is new in Gallium Nitride and Silicon Carbide technologies for power electronics?
GaN IC Roadmaps
มุมมอง 393ปีที่แล้ว
GaN IC Roadmaps
Vertical GaN "Technology of Future" - Now a Reality with NexGen Power Systems
มุมมอง 431ปีที่แล้ว
Vertical GaN "Technology of Future" - Now a Reality with NexGen Power Systems
Power GaN technology for mainstream power conversion applications
มุมมอง 252ปีที่แล้ว
Power GaN technology for mainstream power conversion applications
Extending the benefits of GaN solutions from power delivery to other industrial applications
มุมมอง 95ปีที่แล้ว
Extending the benefits of GaN solutions from power delivery to other industrial applications
Continued GaN Adoption Requires Innovation
มุมมอง 107ปีที่แล้ว
Continued GaN Adoption Requires Innovation

ความคิดเห็น

  • @jbachinatttttti
    @jbachinatttttti หลายเดือนก่อน

    great

  • @hilwaamanamankiyar-pp5bf
    @hilwaamanamankiyar-pp5bf 5 หลายเดือนก่อน

    MANUFACTURER

  • @jonathanshaw5563
    @jonathanshaw5563 ปีที่แล้ว

    *promosm* 🌟

  • @johnkuo6249
    @johnkuo6249 ปีที่แล้ว

    Hello, I seem ch3 bandwidth setting 200MHz and CH7 bandwidth setting 1GHz, May I know why different setting on this?

  • @PavolFilek
    @PavolFilek 2 ปีที่แล้ว

    I need a lot of money to test this ....

  • @rozerscott4410
    @rozerscott4410 2 ปีที่แล้ว

    Gu

  • @murattirhis9471
    @murattirhis9471 2 ปีที่แล้ว

    very impressive👌

  • @rozerscott4410
    @rozerscott4410 2 ปีที่แล้ว

    🥰🥰🥰🥰💗💗💗💗👍👍👍👍👍👍💅👍👍💌😻😻😻😻😻😺😸🤗🤗🤗🤗🤗🤭🤭🤑🤑🤑🤑🤑🤑🤑🤑

  • @kayhanince
    @kayhanince 2 ปีที่แล้ว

    thanks for the info!

  • @bhattsr6649
    @bhattsr6649 2 ปีที่แล้ว

    Good technology in totality....

  • @Dc_tech386
    @Dc_tech386 2 ปีที่แล้ว

    Hi I am trying to understand why mosfet damaged in a inverter dc to ac circuit a simple circuit showing 2npn mosfet connected to a half bridge inverter with only Shockley diodes to drain and source and diner diodes to gate and source but the mosfet switching convert dc to ac for only 1 minutes and mosfet failed this action happened with all 20 mosfet tested the mosfet is switching hard start but igbt turn on the transformer easy and smoothly converting and work perfectly for hours and still work but when replaced with mosfet irfz44n and irf 3710 the mosfet all fail even with a sic circuit inplace so con you explain to me why this is happening with the mosfet with no low but igbt work but mosfet fail

    • @ilyasboujraf6051
      @ilyasboujraf6051 11 หลายเดือนก่อน

      hello brother i hope you are fine please i would like you to help me in this topic SiC power devices characterization and modeling for embedded power converters

    • @lo2740
      @lo2740 10 หลายเดือนก่อน

      This is an OnSemi presentation, is not the place to seek help for your specific repair issue.

    • @Dc_tech386
      @Dc_tech386 10 หลายเดือนก่อน

      @@lo2740 it’s ok I get pass that along time ago and my answer to why and fix it everything is ok

    • @thomasmaughan4798
      @thomasmaughan4798 9 หลายเดือนก่อน

      MOSFET has rather high capacitance and a sharp transient especially turn-off will pulse the gate. This can make turn-off fail and in a totem-pole arrangement, the top and bottom MOSFET can turn on simultaneously which is a short circuit from battery. Also, MOSFET has very low "on" resistance which can allow high current flow if feeding a capacitor (for instance). Abrupt turn-off can produce high voltage if feeding into inductance even if you have a snubber diode if the diode is not fast enough (or able to handle high impulse current).

  • @robertpearson8546
    @robertpearson8546 2 ปีที่แล้ว

    Using GaN in 1920-era designs is like using solid titanium spokes on a tricycle. Try using 2011-era circuits!

  • @ronakjhala7037
    @ronakjhala7037 2 ปีที่แล้ว

    Still you have a confusion 🤔 Why don't you checkout a much simpler explanation video by go through the link below 👇 th-cam.com/video/C62TE700DwE/w-d-xo.html

  • @robertdole5391
    @robertdole5391 3 ปีที่แล้ว

    SiC is fantastic for Body Armor….you are missing a growing market. The world is going crazy and body armor is going to be worth its weight in gold in the next ten years.

    • @alexanderbrown6077
      @alexanderbrown6077 ปีที่แล้ว

      There are different grades of SiC. The purity and crystal structure involved in this variant of SiC used for the power electronics market is too difficult to achieve to make it economically viable for body armor.

  • @Nothingguo
    @Nothingguo 3 ปีที่แล้ว

    Can I know what software you use to simulate the characteristics of SiC devices

  • @sakhonepharkphoumy8234
    @sakhonepharkphoumy8234 3 ปีที่แล้ว

    thank you so much. It is good for the near future of GaN power.

  • @supercolargol1958
    @supercolargol1958 3 ปีที่แล้ว

    Thanks Bodo for making this Tech talk possible in the difficult C19 days we are facing. Very interesting and great speakers!